Narrow trench manufacturing method

Abstract

The invention provides a narrow trench manufacturing method. The method includes the steps that (1) a silicon nitride layer and a hard mask are arranged on a semiconductor substrate in sequence; (2) photoresist is arranged on the hard mask; (3) the photoresist is exposed and developed to form a phototresist pattern with a first size; (4) after the phototresist pattern is formed, ion injection is conducted on a wafer so as to conduct non-crystallizing processing on the exposed area of the phototresist pattern; (5) after ion injection is conducted, dry etching processing is conducted by using the phototresist with the phototresist pattern so as to form a trench with a second size in the substrate.

Description

technical field [0001] The present invention relates to the field of semiconductor manufacturing, in particular to an ion implantation process and a dry etching process; more specifically, the present invention relates to a method for manufacturing a narrow trench. Background technique [0002] The current general trench production process is as follows: Figure 1 to Figure 4 As shown, a silicon nitride layer 2 is first arranged on a semiconductor substrate 1, and then a hard mask 3 is arranged on the silicon nitride layer 2, and then a photoresist 4 is arranged on the hard mask 3, and then the photolithography The glue 4 is exposed and developed to form a photoresist pattern with a first size L1; thereafter, a dry etching process is performed using the photoresist 4 formed with a photoresist pattern to have a trench with a second size L2 in the substrate 1 pattern. [0003] However, although there is a certain selectivity during dry etching (mainly vertical etching), in fa...

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Problems solved by technology

[0003] However, although there is a certain selectivity during dry etching (mainly vertical etching), in fact, there is inevitably etching in the lateral direction.

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