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Thin film transistor, manufacturing method thereof, display substrate and display device

A thin-film transistor and thin-film technology, which is applied in the manufacture of transistors, semiconductor/solid-state devices, electric solid-state devices, etc., can solve the problems of prolonged production cycle, low production cost, and high production cost, and achieve low production cost, short cycle, and yield. high effect

Active Publication Date: 2014-08-13
BOE TECH GRP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to solve the problems in the prior art thin film transistors and their preparation methods, display substrates, and display devices that the etching barrier layer requires a separate patterning process, resulting in complex manufacturing processes, prolonged production cycles, reduced yields, and high production costs. Provide a thin film transistor with simple manufacturing process, short cycle time, high yield rate, and low production cost, its preparation method, display substrate, and display device

Method used

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  • Thin film transistor, manufacturing method thereof, display substrate and display device
  • Thin film transistor, manufacturing method thereof, display substrate and display device
  • Thin film transistor, manufacturing method thereof, display substrate and display device

Examples

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Embodiment 1

[0042] This embodiment provides a method for preparing a thin film transistor, including:

[0043] An oxide active layer film and a protective layer film are formed on the substrate. The material of the protective layer film is a tin oxide-based material. The oxide active layer film and the protective layer film are simultaneously processed by a patterning process to form an oxide active layer film. Graphics of source layer and protection layer;

[0044] Form the source and drain electrode films on the protective layer, and process the source and drain electrode films through a patterning process to form the pattern of source and drain electrodes;

[0045] Annealing is carried out under an oxygen-containing atmosphere, the oxide active layer and the protective layer are interdiffused on the contact surface of the two, and at least one transition region is formed on both sides of the contact surface, and the transition region is used to reduce the The off-state current of a th...

Embodiment 2

[0070] like Figure 8As shown, the embodiment provides a thin film transistor, including: an oxide active layer 4, a protective layer 5 located on the oxide active layer 4, and source and drain electrodes 6, and the oxide active layer 4 and the protective layer The layer 5 includes at least one transition region 8 on both sides of the contact surface, and the transition region 8 is used to reduce the off-state current of the thin film transistor. For the specific manufacturing process of the thin film transistor in the embodiment of the present invention, reference may be made to the method in Embodiment 1, which will not be repeated here.

[0071] Specifically, the protection layer also includes a non-transition region away from the oxide active layer 4, and the transition region 8 includes a material formed by interdiffusion between the tin oxide-based material and the material of the oxide active layer after annealing; The non-transition region mentioned above is made of t...

Embodiment 3

[0085] This embodiment provides a display substrate, which includes the above thin film transistor, other necessary functional layers and connection lines.

[0086] The display substrate provided by the embodiment of the present invention has the advantages of simple manufacturing process, high yield rate and low production cost.

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Abstract

The invention provides a thin film transistor, a manufacturing method thereof, a display substrate and a display device, and belongs to the technical field of display. The thin film transistor, the manufacturing method thereof, the display substrate and the display device can solve the problems that an existing thin film transistor, an existing display substrate and an existing display device are complex in manufacturing process, long in manufacturing cycle, low in yield and high in production cost. According to the thin film transistor, the manufacturing method thereof, the display substrate and the display device, a protection layer and an oxide active layer form an oxide active layer graph through a one-time graph composition process, one time of graph composition process is omitted compared with the prior art, and the thin film transistor is made to be easy in manufacturing process, short in cycle, high in yield and low in production cost; annealing is carried out in oxygen bearing atmosphere, and thus damage to the oxide active layer by plasma when a source electrode and a drain electrode are formed can be repaired; meanwhile, the contact side of the oxide active layer and the contact side of the protection layer are respectively provided with a transition area, and the off-state current of the thin film transistor can be lowered.

Description

technical field [0001] The invention belongs to the field of display technology, and in particular relates to a thin film transistor, a preparation method thereof, a display substrate, and a display device. Background technique [0002] In recent years, with the continuous development of flat panel display technology, large-size, high-resolution, 3D liquid crystal display and organic electroluminescent display (OLED) technology have become the main development directions, and traditional amorphous silicon thin film transistors have been difficult to meet the requirements of related technologies. Requirements, thin film transistors whose active layer is oxide (such as indium gallium zinc oxide (IGZO, In-Ga-Zn-O)) are the most promising thin film transistors for next-generation flat panel displays, and almost meet all the above technical requirements. Such as figure 1 As shown, at present, a schematic structural diagram of an oxide (such as indium gallium zinc oxide (IGZO)) t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/34H01L29/786H01L29/06
CPCH01L27/1214H01L29/0657H01L29/66742H01L29/7869H01L29/786
Inventor 赵策
Owner BOE TECH GRP CO LTD