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A method for chip sintering instead of hydrogen furnace

A chip and hydrogen technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as hidden dangers, production efficiency and product yield, contamination, etc., to achieve low risk factor, high production efficiency, Simple to use effects

Active Publication Date: 2017-05-03
THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] For a long time, limited by the size of the tube shell, the traditional low-temperature furnace hydrogen sintering method has been used in China for the sintering of low-power devices and monolithic circuits. The products produced by this sintering method have poor surface conditions, chip scratches, and chipping. The edge and contamination are serious, and the operation skills of the process operators are very high, resulting in low production efficiency and product yield; because the hydrogen tail gas is sealed with an open flame during sintering, especially in a sealed workshop, this sintering method has great advantages. big danger

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  • A method for chip sintering instead of hydrogen furnace

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Embodiment 1

[0029] A method for replacing a hydrogen furnace for chip sintering, comprising the following steps:

[0030] 1) Metallize the back of the silicon chip to form a silicon chip. The metal on the back of the silicon chip is gold arsenic alloy, and the thickness of the metal on the back of the silicon chip is 4000 ;

[0031] 2) When the heating platform is at a constant temperature, place the package carrier in a place filled with N 2 Preheating in the heating platform of gas (or other protective gas), the preheating temperature is 400°, and the flow rate of protective gas is 2.5scfh;

[0032] 3) Place the silicon wafer after the backside metallization treatment on the designated sintering area of ​​the packaging carrier, and the thickness of the gold layer at the corresponding position of the packaging carrier and the chip is 2.5 μm;

[0033] 4) Apply ultrasonic energy on the surface of the above-mentioned silicon chip, so that the silicon is continuously diffused into the met...

Embodiment 2

[0036] A method for replacing a hydrogen furnace for chip sintering, comprising the following steps:

[0037] 1) Metallize the back of the silicon chip to form a silicon chip. The metal on the back of the silicon chip is gold arsenic alloy, and the thickness of the metal on the back of the silicon chip is 9000 ;

[0038] 2) When the heating platform is at a constant temperature, place the package carrier in a place filled with N 2 Preheating in the heating platform of air (or other protective gas), the preheating temperature is 410°, and the flow rate of protective gas is 3.0scfh;

[0039] 3) Place the silicon wafer after the backside metallization treatment on the designated sintering area of ​​the packaging carrier, and the thickness of the gold layer at the corresponding position of the packaging carrier and the chip is 5 μm;

[0040] 4) Apply ultrasonic energy on the surface of the above-mentioned silicon chip, so that the silicon is continuously diffused into the metal...

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Abstract

The invention discloses a method for chip sintering by replacing a hydrogen furnace, and relates to the technical field of silicon semiconductor chip sintering methods. The method comprises the following steps that (1) metallization treatment is carried out on the back face of a silicon chip; (2) when a heating platform is at the constant temperature, a packaging carrier is arranged inside the heating platform filled with shielding gas for preheating; (3) the silicon chip obtained after metallization treatment is carried out on the back face of the silicon chip is placed on a designated sintering zone of the packaging carrier; (4) ultrasonic energy is applied on the surface of the silicon chip, silicon is constantly diffused to the back face of the chip and a metal layer of the sintering zone, and the back face of the silicon chip is tightly combined with the metal of the sintering zone; (5) the sintered product is taken down from the heating platform, the product is cooled to the room temperature according to the stepped cooling principle, and the sintering process is completed. The method has the advantages of being easy to operate, high in production efficiency, good in reliability, low in danger coefficient, and applicable to sintering of a deep cavity, a small shell and a small-area chip, and achieving safety, reliability and high efficiency of product production.

Description

technical field [0001] The invention relates to the technical field of a silicon semiconductor device chip sintering method, in particular to a chip sintering method with safe use and good sintering effect. Background technique [0002] For bipolar power devices, a good ohmic contact between the chip and the packaging carrier substrate is a prerequisite for ensuring the normal operation of the power device. Poor ohmic contact will increase the thermal resistance of the device, cause uneven heat dissipation, affect the distribution of current in the device, damage the thermal stability and long-term reliability of the device, and even burn the device. The eutectic sintering method has the advantages of high mechanical strength, small thermal resistance, good stability, high reliability and less impurities, so it has been widely used in chip assembly of microwave power devices and components and is highly reliable. Favored by the device packaging industry. [0003] For a lon...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/60
Inventor 潘茹黄雒光潘仙玲程春红许洋
Owner THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP