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Copper metallization structure of power semiconductor chip and preparation method thereof

A power semiconductor and copper metal technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve the problem of high power applied to the bonding point, increase, and increase the difficulty and cost of the metallization process, etc. problems, to achieve the effect of reducing process difficulty and cost, ensuring life and reliability, and enhancing mechanical strength

Active Publication Date: 2016-11-30
ZHUZHOU CRRC TIMES SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Since the hardness of the copper wire is greater than that of the aluminum wire, the power applied to the bonding point is relatively large when the metal copper wire is bonded, and the thickness of the conventional copper metallization layer cannot withstand such a large power
Therefore, it is necessary to increase the thickness of the copper metallization layer, and as the diameter of the copper lead wire increases, the required power needs to be further increased, resulting in a corresponding further increase in the thickness of the copper metallization layer, and the final copper metallization The thickness of the layer is several times the thickness of the conventional aluminum metallization layer, and the copper metallization layer is realized by the lift-off process, so the thickness of the photoresist molding is also very large, which increases the difficulty and cost of the metallization process
[0005] Moreover, as the wire diameter of the copper wire increases, even a copper metallization layer that is several times thicker than the aluminum metallization layer may not be able to meet the requirements of copper wire bonding, and the yield of copper wire bonding with a larger wire diameter cannot be guaranteed. , ultimately affecting the lifetime and reliability of the copper wire bond

Method used

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  • Copper metallization structure of power semiconductor chip and preparation method thereof
  • Copper metallization structure of power semiconductor chip and preparation method thereof
  • Copper metallization structure of power semiconductor chip and preparation method thereof

Examples

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Embodiment 1

[0062] combine figure 1 The copper metallization structure of the power semiconductor chip provided by Embodiment 1 of the present invention will be described.

[0063] like figure 1 As shown, the copper metallization structure of the power semiconductor chip provided by Embodiment 1 includes: a barrier layer 102 located above the substrate 101, a seed copper layer 103 located above the barrier layer 102, and an enhancement layer 104 located above the seed copper layer 103, Copper metallization layer 105 over enhancement layer 104 .

[0064]Wherein, from the perspective of improving the mechanical strength of the copper metallization structure, preferably, the enhancement layer 104 covers the entire surface of the seed copper layer 103, but since the current conduction capability of the enhancement layer 104 is smaller than that of copper, Therefore, in order to ensure the current conduction capability of the electrode, the enhancement layer 104 with a smaller area should be...

Embodiment 2

[0111] The copper metallization structure of the power semiconductor chip described in the second embodiment has many similarities with the copper metallization structure described in the first embodiment, and the only difference is that the position of the enhancement layer in the entire copper metallization structure is different. For the sake of brevity, this embodiment only focuses on the description of the differences, and for the similarities, please refer to the description of the first embodiment.

[0112] Such as Figure 5 As shown, the copper metallization structure of the power semiconductor chip described in Embodiment 2 includes: a barrier layer 502 located above the substrate 501, and an enhancement layer 504 located above the barrier layer 502, wherein the enhancement layer 504 covers the barrier layer 502 The copper metallization structure further includes a copper seed layer 503 located above the enhancement layer 504 and the barrier layer 502 not covered by t...

Embodiment 3

[0124] The copper metallization structure of the power semiconductor chip described in the third embodiment has many similarities with the copper metallization structure described in the first embodiment, and the only difference is that the position of the enhancement layer in the entire copper metallization structure is different. For the sake of brevity, this embodiment only focuses on the description of the differences, and for the similarities, please refer to the description of the first embodiment.

[0125] combine Figure 7 The copper metallization structure of the power semiconductor chip provided by Embodiment 3 of the present invention is introduced.

[0126] Such as Figure 7 As shown, the copper metallization structure of the power semiconductor chip described in the third embodiment includes: a barrier layer 702 located above the substrate 701 , a seed copper layer 703 located above the barrier layer 702 , and a copper metallization located above the seed copper ...

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Abstract

The invention provides a copper metallization structure of a power semiconductor chip and a preparation method thereof. The copper metallization structure includes a barrier layer, a seed copper layer, and a copper metallization layer sequentially located above a substrate, and further includes: an enhancement layer; Wherein, the enhancement layer is located between the seed copper layer and the copper metallization layer; or, the enhancement layer is located between the barrier layer and the seed copper layer; or, the enhancement layer is located between the above the copper metallization layer. The structure is beneficial to reduce the thickness of the copper metallization layer, is beneficial to reduce the difficulty and cost of the process, and can ensure the life and reliability of the copper wire bonding point.

Description

technical field [0001] The invention relates to the technical field of manufacturing power semiconductor chips, in particular to a copper metal structure of a power semiconductor chip and a preparation method thereof. Background technique [0002] Compared with metal aluminum, metal copper has lower resistivity, better thermal conductivity and yield strength. The use of copper wire bonding can greatly improve the reliability of the module. Correspondingly, the copper metal on the front of the power semiconductor chip Technology is also being used more and more widely. [0003] At present, the copper metallization structure on the surface of a power semiconductor chip mainly includes a barrier layer, a seed copper layer and a metal copperization layer located above the substrate. [0004] Since the hardness of the copper wire is greater than that of the aluminum wire, the power applied to the bonding point is relatively large when the metal copper wire is bonded, and the thi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/488H01L21/60
Inventor 刘国友覃荣震黄建伟
Owner ZHUZHOU CRRC TIMES SEMICON CO LTD