Semiconductor device including hemt and misfet and method of forming same

Abstract

The present invention relates to semiconductor devices including HEMTs and MISFETs and methods of forming the same, which include a first III-V compound layer. The second III-V compound layer is disposed on the first III-V compound layer and is compositionally different from the first III-V compound layer. A third III-V compound layer is deposited on the second III-V compound layer and is compositionally different from the second III-V compound layer. Source features and drain features are disposed in each MISFET and HEMT region on the third III-V compound layer. A gate electrode is disposed over the second III-V compound layer between the source feature and the drain feature. A gate dielectric layer is disposed under the gate electrode in the MISFET region but over the top surface of the third III-V compound layer.

Description

technical field [0001] The present invention relates generally to semiconductor structures, but more particularly to combined high electron mobility transistor (HEMT) and metal insulator semiconductor field effect transistor (MISFET) structures and methods of forming such semiconductor structures. Background technique [0002] In semiconductor technology, due to their properties, Group III-V (or III-V) semiconductor compounds are used to form various integrated circuit devices, such as high-power field-effect transistors, high-frequency transistors, or high-electron-mobility transistors ( HEMTs). Like a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET), a HEMT is a junction (i.e., a heterojunction) that incorporates a channel between two materials with different bandgaps as an alternatively doped region field effect transistors. Compared with MOSFETs, HEMTs have several attractive properties, including high electron mobility, ability to transmit signals at high fr...

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