An ultrasonic atomized polishing solution suitable for tft-lcd glass substrates

A technology of ultrasonic atomization and polishing liquid, applied in polishing compositions containing abrasives, etc., to achieve the effects of easy cleaning, high material removal rate, and high utilization rate

Inactive Publication Date: 2015-09-30
JIANGNAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] At present, there are very few related researches on the surface processing of TFT-LCD glass substrates at home and abroad.

Method used

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  • An ultrasonic atomized polishing solution suitable for tft-lcd glass substrates

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] Add 90g of deionized water to 12g of cerium oxide with a particle size of 50nm, and keep stirring until the solution does not precipitate; then add 50g of silicon oxide to the mixed solution with a mass fraction of 30% silica sol (the particle size of the silicon oxide is 15~20nm), stirring while adding; adding hydroxyethylethylenediamine and deionized water, stirring constantly and adjusting the pH of the solution to 11; 300g, and then ultrasonically dispersed (frequency 40kHz, power 70W) for 30 minutes.

[0026] Effects of use: Pour the polishing liquid into an ultrasonic atomizer, conduct an atomization polishing experiment, polish for 5 minutes, then perform 1 minute of water polishing, rinse with deionized water after polishing, and dry. It is measured that the removal rate of glass reaches 202nm / min, and the surface roughness reaches 1.35nm. Under the same polishing parameters, the polishing liquid was used for traditional polishing experiments, and the measured ...

Embodiment 2

[0028] Add 90g of deionized water to 18g of cerium oxide with a particle size of 50nm, and keep stirring until the solution does not precipitate; then add 120g of silicon oxide to the mixed solution with a mass fraction of 30% silica sol (the particle size of the silicon oxide is 15~20nm), stirring while adding; adding ethylenediamine and deionized water, stirring constantly and adjusting the pH of the solution to 11.5; then adding 4.5g of polyvinylpyrrolidone, stirring continuously to make it fully dissolved, so that the solution reached 300g, and then Ultrasonic dispersion (frequency 40kHz, power 70W) for 20 minutes.

[0029] Effects of use: Pour the polishing liquid into an ultrasonic atomizer, conduct an atomization polishing experiment, polish for 5 minutes, then perform 1 minute of water polishing, rinse with deionized water after polishing, and dry. It is measured that the removal rate of glass reaches 180nm / min, and the surface roughness reaches 1.52nm.

Embodiment 3

[0031] Add 60g of deionized water to 8g of cerium oxide with a particle diameter of 50nm, and keep stirring until the solution does not precipitate; then add 100g of silicon oxide to the mixed solution with a mass fraction of 30% silica sol (the particle diameter of silicon oxide is 15~20nm), stir while adding; add hydroxyethylethylenediamine and deionized water, keep stirring and adjust the pH of the solution to 10.5; then add 2g of polyvinylpyrrolidone, keep stirring to fully dissolve it, and make the solution reach 200g , and then ultrasonically dispersed (frequency 40kHz, power 70W) for 25 minutes.

[0032] Effects of use: Pour the polishing liquid into an ultrasonic atomizer, conduct an atomization polishing experiment, polish for 5 minutes, then perform 1 minute of water polishing, rinse with deionized water after polishing, and dry. It is measured that the removal rate of glass reaches 189nm / min, and the surface roughness reaches 1.42nm.

[0033] The formula for calcul...

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Abstract

The invention relates to an ultrasonic atomization-type polishing solution suitable for a TFT-LCD (Thin Film Transistor-Liquid Crystal Display) glass substrate. The polishing solution comprises the following raw materials: cerium oxide, silica sol, deionized water, a pH regulator and a surfactant. A production method of the polishing solution comprises the following steps: firstly, dissolving 1 to 10 parts of cerium oxide in 25 to 30 parts of deionized water and adding 16 to 50 parts of silica sol in a stirring manner until floccules are not contained in the solution; then adding the pH regulator and the deionized water so as to regulate the pH of the solution to reach 10 to 12; and finally, adding 0.5 to 2 parts of surfactant, fully dissolving and carrying out ultrasonic dispersion for 10 to 30 minutes so as to obtain the polishing solution. The polishing solution is applied after being atomized. The polishing solution is simple to operate, small in consumption, high in polishing efficiency, good in smoothness of polished glass surface and free of pollution; a polisher is prevented from being damaged.

Description

technical field [0001] The invention relates to the technical field of mechanical polishing fluid, in particular to an ultrasonic atomized polishing fluid for TFT-LCD glass substrates. Background technique [0002] Flat-panel liquid crystal display technology is one of the fastest-growing high-tech fields in the 21st century. The glass substrate only accounts for about 6% of the cost of TFT-LCD raw materials, but it is the most important component, which has a great impact on the performance of the display. closely related. In consumer IT products using TFT-LCD flat panel display technology, lightness and thinness are the two main core competitive elements. In order to achieve lightness and thinness, it is common to reduce the thickness of the glass substrate, so as to achieve the purpose of reducing thickness and weight at the same time. [0003] At present, there are two main thinning processes for TFT-LCD glass substrates: one is chemical etching, and the other is phys...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09G1/02
Inventor 李庆忠莫益栋
Owner JIANGNAN UNIV
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