Thin film transistor, manufacturing method thereof, and display device
A thin-film transistor, step-type technology, applied in transistors, semiconductor/solid-state device manufacturing, electric solid-state devices, etc., can solve the problems of cumbersome preparation process of LTPSTFT, save production time, simplify production process, and improve stability.
Active Publication Date: 2017-01-25
BOE TECH GRP CO LTD
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Problems solved by technology
[0004] The above method can improve the thermal electron effect in the current LTPS TFT structure, but more than two patterning processes are required in the process of obtaining the LTPS TFT with the lightly doped source-drain structure, resulting in the acquisition of the LTPS TFT with the lightly doped source-drain structure. The preparation process of TFT is cumbersome
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preparation example Construction
[0061] Aiming at the problems of many times of patterning and cumbersome process in the prior art, the embodiment of the present invention provides a preparation method of LPTS TFT that reduces the patterning process such as figure 2 Shown, this preparation method comprises:
[0062] A01, forming a gate metal layer;
[0063] A02, forming a stepped gate structure through a patterning process (such as Figure 3F shown);
[0064] A03, performing the first ion implantation procedure to form a first heavily doped region and a second heavily doped region, the distance between the first heavily doped region and the second heavily doped region is a first length;
[0065] A04. Form the step gate structure into a gate (such as Figure 3H shown);
[0066] A05 performs the second ion implantation procedure to form a first lightly doped region and a second lightly doped region, the distance between the first lightly doped region and the second lightly doped region is a second length, ...
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Abstract
A thin film transistor, its manufacturing method, and a display device are provided. The method comprises: forming a gate metal layer (35), forming a step-like gate structure (352) by one patterning process; performing a first ion implantation procedure to forming a first heavily doped area (39a) and a second heavily doped area (39b), the first heavily doped area (39a) being separated apart from the second heavily doped area (39b) by a first length; forming a gate electrode (353) from the step-like gate structure (352); performing a second ion implantation procedure to form a first lightly doped area (38a) and a second lightly doped area (38b), the first lightly doped area (38a) being separated apart from the second lightly doped area (38b) by a second length less than the first length. By the above method, the process for manufacturing the LTPS TFT having the lightly doped source / drain structure can be simplified.
Description
technical field [0001] The invention relates to the field of thin film transistor manufacturing technology, in particular to a thin film transistor and a manufacturing method thereof. Background technique [0002] The preparation process of a common Low Temperature Poly Silicon Thin Film Transistor (LTPS TFT for short) includes: depositing a buffer layer on a glass substrate, and then crystallizing the amorphous silicon (a-Si) layer on the buffer layer. Chemical treatment to obtain polysilicon (p-Si), coat the gate insulating layer on the polysilicon layer, pattern the gate pattern and use it as a mask to perform ion implantation on p-Si, and control the implantation amount to obtain the required heavy The LTPS TFT structure can be obtained by doping the source-drain structure, and then performing interlayer insulating layer, source-drain and planarization treatment. In the LTPS TFT structure obtained by the above method, due to the high doping concentration of the two heav...
Claims
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IPC IPC(8): H01L21/336H01L21/28H01L29/786
CPCH01L29/78675H01L21/02532H01L21/02592H01L21/0262H01L21/02675H01L21/0273H01L21/0274H01L21/26513H01L21/28H01L21/31058H01L21/32134H01L21/32139H01L27/1222H01L27/1248H01L27/1274H01L27/1288H01L29/167H01L29/42372H01L29/42384H01L29/66757H01L29/786H01L29/78621
Inventor 卜倩倩郭炜
Owner BOE TECH GRP CO LTD