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A thinning method of ultra-thin wafer

A wafer, ultra-thin technology, applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of reducing wafer strength, dark grain fragments, edge chipping, etc., and achieve the effect of improving grinding quality and strength

Active Publication Date: 2016-08-24
TIANJIN RES INST FOR ADVANCED EQUIP TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, sharp corners are formed on the edge of the wafer, which will cause edge chipping and dark grain debris
Warping, edge chipping and edge breaking can greatly reduce the strength of the wafer and increase the fragmentation rate of the wafer during transportation

Method used

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  • A thinning method of ultra-thin wafer
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  • A thinning method of ultra-thin wafer

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Experimental program
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Embodiment Construction

[0024] In the process of wafer grinding and thinning, as the thickness decreases, the strength of the wafer decreases, and sharp corners appear on the edge of the wafer. The normal grinding force can easily cause the edge to collapse, and the extension of the edge fracture can cause wafer fragments. In order to solve the above-mentioned problems, the present invention trims the edge of the wafer in advance, and then uses the segmented grinding method to thin the wafer.

[0025] Such as figure 1 Shown is the process flow chart of the wafer thinning method of the present invention, and the specific steps include:

[0026] Step 1. Provide a semiconductor wafer to be thinned;

[0027] Wherein, one side of the semiconductor wafer is the front side, and the other side is the back side to be thinned.

[0028] Step 2, trimming of edges;

[0029] Step 3. Sectional grinding and thinning.

[0030] Wherein, the segmented grinding adopts different grinding parameters as the grinding allowance chang...

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Abstract

The invention provides a thinning method for ultra-thin wafers, and belongs to the field of ultra-thin wafer processing. The thinning method comprises the steps of providing the wafers to be thinned; trimming the round corners of the edges of the wafers to be thinned to prevent the edge breakage phenomenon in the grinding process; grinding and thinning the back surfaces of the wafers to achieve a target thickness. A sectional mode is adopted in the grinding process, and namely, different grinding parameters are adopted along with the change of grinding allowance of the wafers. According to the thinning method, damage caused by grinding in the former process can be fully eliminated, the edge breakage phenomenon in the grinding process of the wafers can be avoided, the grinding quality is improved, and the strength of the wafers is guaranteed.

Description

Technical field [0001] The invention relates to the field of three-dimensional packaging, in particular to a method for thinning an ultra-thin wafer. Background technique [0002] Electronic packaging technology is a technology for packaging chips. Packaging is generally divided into airtight packaging and non-airtight packaging. The main purpose of the package is: a. Protect the IC chip; b. Provide the interconnection between the IC chip and other electronic components to realize the transmission of electrical signals. The main function of the package: reduce or dissipate the internal heat generated during the operation of the device; anti-humidity and moisture resistance, prevent the impurity in the air from corroding the chip circuit and causing the electrical performance to decline; prevent ion pollution; prevent radiation; reduce heat Mechanical stress; mechanical support is provided, and the packaged chip is easier to install and transport. In short, the quality of the pa...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/304
CPCH01L21/304
Inventor 秦飞孙敬龙安彤王仲康唐亮
Owner TIANJIN RES INST FOR ADVANCED EQUIP TSINGHUA UNIV