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Etching liquid for forming texture

A technology of etching liquid and texture, which is applied in the field of etching liquid, and can solve the problem that the etching liquid cannot be as it is.

Inactive Publication Date: 2014-10-08
DAI ICHI KOGYO SEIYAKU CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, there is a problem that the etching solution used in the existing loose abrasive system cannot be directly used in the fixed abrasive system as it is

Method used

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  • Etching liquid for forming texture
  • Etching liquid for forming texture

Examples

Experimental program
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Effect test

Embodiment

[0042] The present invention is described more specifically based on examples. However, the present invention is not limited to the following examples.

[0043] [Example, comparative example]

[0044] Sodium hydroxide and a phosphonic acid derivative or a salt thereof were mixed at a ratio shown in Table 1, and then ion-exchanged water was added to prepare an aqueous solution. It is the etching solution of the present invention. The etchant was heated to 80° C., and a single crystal silicon wafer cut using any of the loose abrasive systems or fixed abrasive systems shown in Table 1 was immersed in the etchant for 20 minutes, then washed with water and dried. The texture structure of the obtained silicon wafer was evaluated by the following two items.

[0045] (1) Appearance evaluation of texture structure

[0046]The texture structure was observed by using a scanning electron microscope (JEOL's JSM-6380LV). Observed under 1000 times magnification, the surface of the base ...

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Abstract

The present invention is capable of uniformly forming a stably good texture on a wafer surface by the use of an etching liquid that is composed of an aqueous solution containing (A) an alkaline component and (B) a phosphonic acid derivative or a salt thereof. The present invention provides an etching liquid for forming a texture on a silicon wafer, from which an additive component does not volatilize in the working temperature range of 60-95 DEG C, and which is applicable to both wafers cut by loose abrasive and wafers cut by bonded abrasive.

Description

technical field [0001] The present invention relates to an etchant for forming a relief structure called a texture on the surface of a silicon substrate. Background technique [0002] The crystalline silicon substrate used for solar cells is given a surface structure treatment called texture treatment for reducing the light reflectance on the substrate surface to reduce the light reflectance on the substrate surface so as to ensure Efficient light absorption is safe and efficient. [0003] Hitherto, a method of impregnating a silicon substrate with an alkaline solution of sodium hydroxide, potassium hydroxide, etc. to form a pyramid-like texture structure has been used, and it is known that by using any other than alkaline components in the etching solution, Additive to form a more uniform pyramid-like texture. [0004] As such a texture forming etchant, for example, as described in Patent Document 1, an aqueous solution of sodium hydroxide or potassium hydroxide to which ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0236
CPCH01L31/02363C09K13/02C09K13/04Y02E10/50
Inventor 中川和典气贺泽繁锅岛敏一
Owner DAI ICHI KOGYO SEIYAKU CO LTD
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