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Sm-Co-based permanent-magnet thin film high in film-base binding force and preparation method thereof

A film-based bonding force, permanent magnet technology, applied in the application of magnetic film to substrate, magnetic layer, cathode sputtering application, etc., can solve problems such as shedding, and achieve the effect of improving bonding force and heat treatment temperature.

Active Publication Date: 2014-10-22
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The technical purpose of the present invention is to provide a kind of Sm-Co base permanent magnet thin film for the above-mentioned Sm-Co base permanent magnet thin film that is positioned at the substrate surface easily from the substrate surface at a higher heat treatment temperature. Strong binding force, so the heat treatment temperature can be increased, and even when the heat treatment temperature is as high as 1000 ° C, it is still well bonded to the substrate without falling off.

Method used

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  • Sm-Co-based permanent-magnet thin film high in film-base binding force and preparation method thereof
  • Sm-Co-based permanent-magnet thin film high in film-base binding force and preparation method thereof
  • Sm-Co-based permanent-magnet thin film high in film-base binding force and preparation method thereof

Examples

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example 1

[0031] In this embodiment, the same as the above-mentioned Comparative Example 1, the substrate is selected from the Si / SiO substrate. 2 (100), there is a buffer layer between the substrate and the Sm-Co-based permanent magnet film, and the thickness of the Sm-Co-based permanent magnet film is 2 μm. Different from the above comparative example 1, the buffer layer has a two-layer structure, one layer is a copper film layer with a thickness of 30nm on the surface of the substrate, and the other layer is a tungsten film layer with a thickness of 300nm on the surface of the copper film layer. film layer.

[0032] The above-mentioned preparation method of the Sm-Co based permanent magnet thin film with double-layer buffer layer is as follows:

[0033] Using magnetron sputtering equipment, using high-purity Ar gas as the working gas, the background vacuum is better than 6.0×10 -6 Pa, the sputtering temperature is room temperature, and the sputtering pressure is 0.5Pa; the W target...

Embodiment 2

[0036] In this embodiment, the structure of the Sm—Co-based permanent magnet thin film on the surface of the substrate is basically the same as that in Embodiment 1. The difference is that the thickness of the copper thin film layer is 100nm, the thickness of the tungsten thin film layer is 500nm, and the thickness of the Sm—Co-based permanent magnet thin film is 5 μm.

[0037] The above-mentioned preparation method of the Sm-Co based permanent magnet thin film with double-layer buffer layer is as follows:

[0038] Using magnetron sputtering equipment, using high-purity Ar gas as the working gas, the background vacuum is better than 6.0×10 -6 Pa, the sputtering temperature is room temperature, and the sputtering pressure is 0.5Pa; the W target with a purity of 99.99% is used as the W buffer layer target, the Cu target with a purity of 99.95% is used as the Cu buffer layer target, and the substrate Si / SiO 2 (100) After cleaning with acetone and blowing dry with nitrogen, depos...

Embodiment 3

[0041] In this embodiment, the structure of the Sm—Co-based permanent magnet thin film on the surface of the substrate is basically the same as that in Embodiment 1. The difference is that the thickness of the copper film layer is 10nm, the thickness of the tungsten film layer is 100nm, and the thickness of the Sm—Co-based permanent magnet film is 1 μm.

[0042] The above-mentioned preparation method of the Sm-Co based permanent magnet thin film with double-layer buffer layer is as follows:

[0043] Using magnetron sputtering equipment, using high-purity Ar gas as the working gas, the background vacuum is better than 6.0×10 -6 Pa, the sputtering temperature is room temperature, and the sputtering pressure is 0.5Pa; the W target with a purity of 99.99% is used as the W buffer layer target, the Cu target with a purity of 99.95% is used as the Cu buffer layer target, and the substrate Si / SiO 2 (100) After cleaning with acetone and blowing dry with nitrogen, deposit a Cu buffer l...

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Abstract

The invention provides an Sm-Co-based permanent-magnet thin film high in film-base binding force. A buffer layer is arranged between the Sm-Co-based permanent-magnet thin film and a base body and is of a two-layer structure, one layer is a copper thin film layer positioned on the surface of the base body while the other layer is a tungsten thin film layer positioned on the surface of the copper thin film layer, and binding force between the Sm-Co-based permanent-magnet thin film and the base body can be improved effectively. Experiments verify that heat treatment temperature of the Sm-Co-based permanent-magnet thin film of the structure during heat treatment can be increased substantially from 600-800 DEG C currently to above 900 DEG C, and the Sm-Co-based permanent-magnet thin film can still be well bound with the base body and cannot shed when the heat treatment temperature is as high as 1000 DEG C.

Description

technical field [0001] The invention belongs to the technical field of permanent magnet films, and in particular relates to a Sm-Co-based permanent magnet film with high film-base bonding force in high-temperature heat treatment and a preparation method thereof. The Sm-Co-based permanent magnet film can withstand high temperatures of 1000°C During the heat treatment process, good film-base bonding force is maintained, and the magnetic properties of the permanent magnet film are not affected. The permanent magnet film is mainly suitable for the fields of magnetic micromachines and micromotors. Background technique [0002] Sm-Co-based permanent magnetic films deposited on the surface of silicon substrates (such as silicon substrates) have important applications in magnetic micro-electromechanical systems due to their high Curie temperature and good corrosion resistance. Generally, the Sm-Co-based permanent magnet thin film is in an amorphous state after being deposited on the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01F10/16H01F41/18
Inventor 祁晓玉王永张健杜娟夏卫星闫阿儒刘平
Owner NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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