Cuprous oxide film with high photoelectrochemical performance and preparation method thereof

A cuprous oxide and photoelectrochemical technology, applied in electrolytic inorganic material coating, etc., can solve the problems of poor film uniformity and high cost, and achieve the effects of reduced defects, less environmental pollution, and reduced production costs

Inactive Publication Date: 2021-05-28
ZHEJIANG SCI-TECH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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The thin film prepared by the prior

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  • Cuprous oxide film with high photoelectrochemical performance and preparation method thereof
  • Cuprous oxide film with high photoelectrochemical performance and preparation method thereof
  • Cuprous oxide film with high photoelectrochemical performance and preparation method thereof

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Embodiment 1

[0039] A cuprous oxide film with high photoelectrochemical performance, 25g of copper sulfate pentahydrate is dissolved in 250mL of deionized water, stirred, and made into a copper sulfate solution with a molar concentration of 0.4mol / L. Dissolve 50ml of sodium lactate in 250mL of deionized water and stir to prepare a sodium lactate solution with a molar concentration of 1.4mol / L. Take 10 mL of the above-mentioned copper sulfate and 10 mL of sodium lactate solution, mix and stir it, and add 1 mol / L sodium hydroxide solution dropwise thereto to adjust the pH to 10. Control the solution temperature at 60° C. by means of a constant temperature water bath. Deposition of cuprous oxide thin films was carried out using a three-electrode electrochemical cell. The working electrode is conductive glass. The counter electrode is a high-purity platinum electrode. The reference electrode is Ag / AgCl / KCl saturated solution electrode. Insert the three electrodes into the prepared electrode...

Embodiment 2

[0048] A cuprous oxide film with high photoelectrochemical performance, 25g of copper sulfate pentahydrate is dissolved in 250mL of deionized water, stirred, and made into a copper sulfate solution with a molar concentration of 0.4mol / L. Dissolve 50ml of sodium lactate in 250mL of deionized water and stir to prepare a sodium lactate solution with a molar concentration of 1.4mol / L. Take 10mL of the above-mentioned copper sulfate and 10ml of sodium lactate solution, mix and stir, add dropwise 1mol / L sodium hydroxide solution to adjust the pH to 12.0, and control the solution temperature at 60°C by means of a constant temperature water bath. Deposition of cuprous oxide thin films was carried out using a three-electrode electrochemical cell. The working electrode is conductive glass. The counter electrode is a high-purity platinum electrode. The reference electrode is Ag / AgCl / KCl saturated solution electrode. Insert the three electrodes into the prepared electrodeposition solut...

Embodiment 3

[0050] A cuprous oxide thin film with high photoelectrochemical performance, 7.5g copper sulfate pentahydrate is dissolved in 250mL deionized water, stirred, and made into a copper sulfate solution with a molar concentration of 0.2mol / L. Dissolve 25ml of sodium lactate in 250mL of deionized water and stir to prepare a sodium lactate solution with a molar concentration of 0.7mol / L. Take 10mL of the above-mentioned copper sulfate and 10ml of sodium lactate solution, mix and stir, add dropwise 1mol / L sodium hydroxide solution to adjust the pH to 12.0, and control the temperature of the solution at 70°C by means of a constant temperature water bath. Deposition of cuprous oxide thin films was carried out using a three-electrode electrochemical cell. The working electrode is conductive glass. The counter electrode is a high-purity platinum electrode. The reference electrode is Ag / AgCl / KCl saturated solution electrode. Insert the three electrodes into the prepared electrodepositio...

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Abstract

The invention discloses a cuprous oxide film with high photoelectrochemical performance and a preparation method thereof. The preparation method comprises the following steps: preparing a deposition solution by taking a soluble copper salt, a lactate solution and a sodium hydroxide solution as raw materials; utilizing a tri-electrode electrochemical tank to perform film deposition on conductive glass; inserting a tri-electrode into the deposition solution to keep the temperature for 30 minutes at 50-70 DEG C; adjusting the pH value to be 9.0-12.0 and controlling deposition time for 20-60 minutes; cleaning and drying the obtained film; and performing carbon removal treatment on the film for one hour under a ventilating condition at 120-150 DEG C, and annealing and sintering the film for 2 hours at 250-400 DEG C. The prepared cuprous oxide film is uniform, compact and free of cracks, and has higher photoelectrochemical performance.

Description

technical field [0001] The invention belongs to the field of photoelectric functional materials, and in particular relates to a cuprous oxide film with high photoelectrochemical performance and a preparation method thereof. Background technique [0002] Facing the gradual depletion of petrochemical energy and the deteriorating human ecosystem, it is necessary to change the global energy consumption structure and gradually shift from traditional energy to renewable energy. Reducing cost and improving photoelectric conversion efficiency are two major problems faced by solar cells. Finding new solar cell materials that are cheap, stable, and have good photovoltaic properties is an effective way to develop low-cost solar cells. [Feng Duosheng et a1. Solar Power Generation Technology and Application, 6(2009):173-178]. [0003] Cu 2 O is a direct bandgap semiconductor material with excellent performance and visible light response. It has potential application value in the field ...

Claims

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Application Information

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IPC IPC(8): C25D9/04C25D5/48C25D5/50
CPCC25D5/48C25D5/50C25D9/04
Inventor 王龙成吴光杰张永飞喻志奎康硕金达莱
Owner ZHEJIANG SCI-TECH UNIV
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