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Preparation method of graphene thin films

A graphene film and graphite technology, applied in the field of graphene film preparation, can solve the problems of few layers, harsh preparation conditions, high cost and difficult peeling, etc., and achieves the effects of simple operation, low cost and environmental friendliness

Inactive Publication Date: 2014-10-29
SUZHOU SHIYOUJIA ELECTRONICS TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Graphene films also have many excellent properties, so there are many methods for preparing films. Among them, epitaxy and CVD methods can obtain films with fewer layers and very good properties, but the preparation conditions are relatively harsh, and the cost is high and it is difficult to peel off.

Method used

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  • Preparation method of graphene thin films

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preparation example Construction

[0016] A kind of preparation method of graphene thin film, comprises the following steps:

[0017] Step 1) First remove the conductive glass, cut several pieces of small glass with a size of 3cm×1cm with a glass knife, and lay them on filter paper for cleaning;

[0018] Step 2) Form graphite oxide colloid or suspension into graphite oxide in water by ultrasonic wave, choose N,N-dimethylformamide (DMF) solution, prepare DMF solution with a concentration of 1mg graphite oxide / mL, seal and store, stand-by;

[0019] Step 3) Drop the solution prepared in step (2) on the prepared glass conductive surface, shake it left and right, place it in a glass container, and dry it in a desiccator for half an hour before storing it for use;

[0020] Step 4) The conductive glass is connected through the working electrode, the electrolytic solution is KCl solution, and the graphene film is obtained by electrolysis at a constant potential.

[0021] Further, the cleaning method in the step (1) i...

Embodiment

[0023] Example: CuInS 2 Photoelectric effect test of film / graphene

[0024] CuInS 2 As a light-absorbing material for solar cells, the main function of thin film is to convert light energy into electrical energy. It has attracted extensive attention due to its excellent comprehensive characteristics. This embodiment is mainly to test the effect of thin-layer graphene on CuInS 2 film effect. As can be seen from the figure, comparing curves 1 and 3, CuInS coated with graphene 2 The photocurrent in thin film case is smaller than CuInS 2 The photocurrent of the film alone, although the graphene film at this time is very thin, it still has a certain hindering effect on light, and graphene itself also has an absorption effect on light. The absorbance of visible light is 2.3%. [21] , so to reach CuInS 2 The light energy on the surface of the film has been weakened, and the photocurrent will naturally decrease. In the case of dark state, the photocurrent is obviously smaller t...

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Abstract

The invention discloses a preparation method of graphene thin films. The preparation method comprises the steps: firstly, taking conductive glass, cutting into a plurality of pieces of small glass with the size of 3 cm*1 cm by a glass cutter, laying on filter paper, and cleaning; then allowing graphite oxide to form a graphite oxide colloid or suspension in water by utilizing an ultrasonic effect, selecting and using an N,N-dimethyl formamide (DMF) solution, preparing a DMF solution with the concentration of 1 mg graphite oxide / mL, and carrying out sealed preservation; followed by dripping the prepared solution on the prepared glass conductive surfaces, performing left and right rotation and uniformly shaking, then placing in a glass ware, drying for half an hour in a dryer, and storing for standby application; and finally connecting the conductive glass through a working electrode, with an electrolytic solution of a KCl solution, electrolyzing under a constant potential, and thus obtaining the graphene thin films. With adopting of the technical scheme of the invention, the graphene thin films have a certain hindrance function to light, and have the advantages of simple operation, low cost, and environmental friendly, and are also suitable for production.

Description

technical field [0001] The invention relates to the field of thin films, in particular to a method for preparing a graphene thin film. Background technique [0002] With the discovery of graphene, its excellent electrical, mechanical, thermal and magnetic properties have attracted widespread attention. At the same time, there are endless methods for preparing graphene, mainly including micromechanical exfoliation, chemical methods and epitaxial growth methods. Graphene films also have many excellent properties, so there are many methods for preparing films. Among them, epitaxy and CVD methods can obtain films with fewer layers and very good performance, but the preparation conditions are relatively harsh, and the cost is high and difficult to peel off. Contents of the invention [0003] The purpose of the present invention is to overcome the problems existing in the prior art, and to provide a preparation method of graphene film. [0004] In order to achieve the above-me...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/04C03C17/22
Inventor 陈鑫
Owner SUZHOU SHIYOUJIA ELECTRONICS TECH
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