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A star-shaped silicon-containing polymer and its preparation method and application

A technology of silicon polymer and coupling reaction, which is applied in the field of star-shaped silicon-containing polymer and its preparation, can solve the problems of few, poor solubility, etc., and achieve the effect of improving stability, improving solubility, and simple and efficient synthesis route

Active Publication Date: 2016-03-30
HANGZHOU NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the application and development of polymer materials still faces the following two main problems: 1. There are not many polymer semiconductor materials with high mobility, high switching ratio and high stability; 2. Most organic semiconductor materials have poor solubility
[0004] The Chinese patent application number 201180019788.5 discloses a polymer of benzodithiophene and its use as an organic semiconductor. The polymer in this patent is a linear polymer, and there are certain problems in solubility

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] (1) Heat a 250ml single-necked round-bottom flask with a heat gun and pump air at the same time. After heating and pumping for 20 minutes, stop heating and pumping. After the flask is cooled, add 1,3,5-tris(thiophene- 2-yl) benzene (2g, 6.17mmol), then pump and inflate the flask (nitrogen) 10 times, add 100ml of tetrahydrofuran into the flask, put the flask in a liquid nitrogen tank and lower the reaction temperature to -78°C Slowly add butyllithium solution (22.22mmol, 9.26ml) dropwise to the flask. The dropping process should be completed within 45 minutes. After the dropping is completed, remove the liquid nitrogen tank, let the temperature of the system rise to room temperature and react for 1h. The whole experiment All were carried out under the protection of nitrogen. After the temperature dropped to -78°C, tributyltin chloride (22.22mmol, 6.03ml) was added. After the dropwise addition, the liquid nitrogen tank was removed, and the temperature of the system was rai...

Embodiment 2

[0034] (1) Heat a 250ml single-necked round-bottom flask with a heat gun and pump air at the same time. After heating and pumping for 20 minutes, stop heating and pumping. After the flask is cooled, add 1,3,5-tris(thiophene- 2-yl) benzene (2g, 6.17mmol), then pump and inflate the flask (nitrogen) 10 times, add 100ml of tetrahydrofuran into the flask, put the flask in a liquid nitrogen tank and lower the reaction temperature to -50°C Slowly add butyllithium solution (18.51mmol, 7.71ml) dropwise to the flask. The dropping process should be completed within 60 minutes. After the dropping is completed, remove the liquid nitrogen tank, let the temperature of the system rise to room temperature and react for 90 minutes. The whole The experiments were all carried out under the protection of nitrogen. After the temperature was lowered to -50°C, tributyltin chloride (18.51mmol, 5.03ml) was added. After the dropwise addition, the liquid nitrogen tank was removed, and the temperature of t...

Embodiment 3

[0038](1) Heat a 250ml single-necked round-bottom flask with a heat gun and pump air at the same time. After heating and pumping for 20 minutes, stop heating and pumping. After the flask is cooled, add 1,3,5-tris(thiophene- 2-yl) benzene (2g, 6.17mmol), then pump and inflate the flask (nitrogen) 10 times, add 100ml of tetrahydrofuran into the flask, put the flask in a liquid nitrogen tank and lower the reaction temperature to -60°C Slowly add butyllithium solution (37.02mmol, 15.43ml) dropwise into the flask. The dropping process should be completed within 30 minutes. After the dropping is completed, remove the liquid nitrogen tank, let the temperature of the system rise to room temperature and react for 30 minutes. The whole The experiments were all carried out under the protection of nitrogen. After the temperature was lowered to -60°C, tributyltin chloride (37.02mmol, 10.05ml) was added. After the dropwise addition, the liquid nitrogen tank was removed, and the temperature o...

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PUM

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Abstract

The invention relates to the technical field of organic semiconductor materials, and provides a star-shaped silicon-containing polymer, a preparation method of the star-shaped silicon-containing polymer, and application of the star-shaped silicon-containing polymer for solving the problems of stability and solubility existing in the organic semiconductor materials. The structural formula of the star-shaped silicon-containing polymer is shown in a formula (I). A star-shaped structure provided by the invention is conductive to improving the solubility of compounds so as to obtain the polymer with relatively high solubility, and is beneficial to a solution method device preparation process suitable for low cost. In addition, the introduction of silicon-containing silole rings is also beneficial for improving the stability of the polymer. The structural formula (I) is as shown in the specification.

Description

technical field [0001] The invention relates to the technical field of organic semiconductor materials, in particular to a star-shaped silicon-containing polymer and its preparation method and application. Background technique [0002] In recent years, the development of organic semiconductor materials has been extremely rapid. Organic semiconductor materials play an important role in organic optoelectronic devices such as field effect transistors (OFETs), organic light emitting diodes (OLED), organic solar photovoltaic cells (OPV) and other organic optoelectronic devices. potential application value. OFETs have many excellent properties of organic semiconductors, such as easy preparation and functionalization, low device preparation temperature, good flexibility, good compatibility with plastic substrates, and large-area preparation, etc., so they are more and more popular. attention. Since it was reported in 1986, OFETs have made great progress. OFET devices can be appl...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C08G61/12
Inventor 高建华杨成东王英峰郝望龙邹素芬张海霞谢辉
Owner HANGZHOU NORMAL UNIVERSITY
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