Method and system for depositing indium tin oxide at low temperature

Abstract

The invention relates to a method and a system for depositing indium tin oxide at a low temperature. The method comprises the following steps of placing a base material into a vacuum film-coating chamber in which an indium tin oxide target material is provided; installing a cooling and vapor-removing device at the periphery of the indium tin oxide target; carrying out vapor-removal treatment on the base material by the cooling and vapor-removing device to remove vapor and impurity gases; controlling surface magnetic field strength of the indium tin oxide target material to be within a range of 600-900 gausses, carrying out film-coating in the presence of a working gas at a temperature of 100 DEG C, and forming an indium tin oxide film on the base material. The system comprises a vacuum film-coating chamber, an indium tin oxide target material, a base material supporting device, a cooling and vapor-removing device and a magnetic field device. The method and the system disclosed by the invention can be carried out at a low temperature, the cooling and vapor-removing device is used for refrigerating to capture vapor and impurity gases, purify and deposit an atmosphere and improve film-coating quality, and magnetic field strength is improved to obtain an indium tin oxide crystal with high quality and low resistivity.

Description

technical field [0001] The invention relates to the technical field of thin film deposition, in particular to a low-temperature deposition method and system of indium tin oxide. Background technique [0002] The vacuum coating technology of indium tin oxide (referred to as ITO) is becoming more and more mature, especially at relatively high temperatures, the coating technology of indium tin oxide is close to perfection, but at low temperatures, especially at room temperature, indium oxide The tin coating technology is not so mature, and the quality of indium tin oxide film formation at low temperature is also very low, which in turn affects the function of its products. [0003] Now in the touch screen market, the single-chip touch screen is printed with ink first, and then coated with indium tin oxide. The ink is not resistant to high temperature, especially white ink and colored ink, which are very sensitive to temperature. In addition, the transparent indium tin oxide for...

AI Technical Summary

Problems solved by technology

The disadvantage of this coating method is that there is a requirement for the indium tin oxide target material, a special proportion of the indium tin oxide target material is required, and special reaction gases such as hydrogen and nitrogen are also required.

[0008] In addition, some existing so-called low-temperature coatings usually encounter problems such as how to crystallize in a low-temperature state or room temperature state, and how to obtain a low-resistivity ITO film

In order to reduce the resistivity, some target materials with lower tin content are used, such as indium oxide: tin oxide is 95:5 or 97:3, but the transmittance is sacrificed, so that the transmittance is not high

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