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AlN film growing on Zr substrate, and preparation method and application of AlN film

A thin film and substrate technology, applied in the field of AlN thin film and its preparation, can solve the problems of unstable chemical properties of metal Zr substrate, difficulty in thin film epitaxy, affecting the quality of epitaxial thin film growth, etc., so as to improve the internal quantum efficiency and current distribution. Beneficial effect of uniformity and efficiency improvement

Inactive Publication Date: 2014-11-05
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] However, the metal Zr substrate is chemically unstable at high temperature. When the epitaxial temperature is higher than 700 °C, the interface reaction between the epitaxial nitride and the metal substrate will seriously affect the quality of the epitaxial film growth.
Pioneering researcher and well-known scientist Akasaki et al. have tried to apply traditional MOCVD or MBE technology to directly epitaxially grow nitrides on substrate materials with variable chemical properties. difficulty

Method used

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  • AlN film growing on Zr substrate, and preparation method and application of AlN film
  • AlN film growing on Zr substrate, and preparation method and application of AlN film
  • AlN film growing on Zr substrate, and preparation method and application of AlN film

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Embodiment 1

[0034] The AlN thin film grown on the Zr substrate of the present embodiment comprises the following steps:

[0035](1) Selection of the substrate and its crystal orientation: the epitaxial substrate uses the (0001) plane of the Zr substrate as the epitaxial plane, and the selected crystal epitaxial orientation relationship: AlN(0001) / / Zr(0001).

[0036] (2) Epitaxial growth of AlN film: the substrate temperature was adjusted to 450°C, and the reaction chamber pressure was 3×10 -5 Torr, Ⅴ / Ⅲ ratio is 50, growth rate is 0.6ML / s; energy consumption is 3.0J / cm 2 And a KrF excimer laser (λ=248nm, t=20ns) PLD with a repetition rate of 20Hz ablates the AlN target (99.99wt%), and epitaxially grows an AlN film with a thickness of 200nm. When depositing AlN thin films, the growth chamber pressure N 2 (99.9999vol%) kept at 3~4×10 -5 Torr to ensure high-quality AlN films.

[0037] Such as figure 1 As shown, the cross-sectional schematic view of the high-quality AlN film grown on the ...

Embodiment 2

[0044] The AlN thin film grown on the Zr substrate of the present embodiment comprises the following steps:

[0045] (1) Selection of the substrate and its crystal orientation: the epitaxial substrate uses the (0001) plane of the Zr substrate as the epitaxial plane, and the selected crystal epitaxial orientation relationship: AlN(0001) / / Zr(0001).

[0046] (2) Epitaxial growth of AlN film: the substrate temperature was adjusted to 550°C, and the reaction chamber pressure was 4×10 -5 Torr, Ⅴ / Ⅲ ratio is 60, growth rate is 0.4ML / s; energy consumption is 3.0J / cm 2 And a KrF excimer laser (λ=248nm, t=20ns) PLD with a repetition rate of 20Hz ablates the AlN target (99.99wt%), and epitaxially grows an AlN film with a thickness of 20nm. When depositing AlN thin films, the growth chamber pressure N 2 (99.9999%) kept at 3~4×10 -5 Torr to ensure high-quality AlN films.

[0047] The performance of the AlN thin film grown on the Zr substrate prepared in this embodiment is similar to tha...

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Abstract

The invention discloses an AlN film growing on a Zr substrate. The AlN film sequentially comprises the Zr substrate and an AlN film part from the bottom up, wherein the AlN film part is an AlN film growing at 450-550 DEG C. The invention further discloses a preparation method and an application of the AlN film growing on the Zr substrate. The AlN film has the advantages of low dislocation density and good crystal quality; the Zr substrate is easy to obtain and low in price; and the production cost can be lowered.

Description

technical field [0001] The invention relates to an AlN thin film and its preparation method and application, in particular to an AlN thin film grown on a Zr substrate and its preparation method and application. Background technique [0002] Light-emitting diode (LED), as a new type of solid-state lighting source and green light source, has outstanding features such as small size, low power consumption, environmental protection, long service life, high brightness, low heat and colorful, and is widely used in outdoor lighting, commercial lighting and decoration Engineering and other fields have a wide range of applications. At present, under the background of the increasingly serious problem of global warming, saving energy and reducing greenhouse gas emissions has become an important issue faced by the whole world. A low-carbon economy based on low energy consumption, low pollution, and low emissions will become an important direction of economic development. In the field o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/02H01L33/00
CPCH01L33/12H01L33/007H01L33/16
Inventor 李国强刘作莲王文樑杨为家林云昊周仕忠钱慧荣
Owner SOUTH CHINA UNIV OF TECH
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