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Method for constructing constant-temperature region by multi-surface heating in vacuum

An area and vacuum technology, which is applied in the field of film growth or film preparation, and batch preparation of large-area films, can solve the problems of substrate atom evaporation and achieve the effect of good temperature area

Inactive Publication Date: 2014-11-19
国成仪器(常州)有限公司
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  • Abstract
  • Description
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AI Technical Summary

Problems solved by technology

[0009] The content of the present invention is to provide a solution, which can not only solve the problem of substrate atom evaporation at high temperature, but also realize the growth of large-area thin films and mass production

Method used

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  • Method for constructing constant-temperature region by multi-surface heating in vacuum

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Embodiment

[0022] Example: One can grow 2*10 in a single time 6 mm 2 Graphene film device

[0023] 1. Refer to the instructions attached figure 1 , The heating device (1) uses a resistance heating source, and the resistance uses high-purity graphite with a cross-section of 18mm*5mm; the substrate (2) uses a copper (Cu) substrate;

[0024] 2. Use the four-sided heating device described in step 1 to construct a 500mm*500mm*800mm space with two empty ends; the entire device is clamped and placed in a vacuum chamber;

[0025] 3. Use C 2 H 4 When the copper (Cu) substrate is heated to a high temperature of 1000 degrees Celsius under the protection of inert gas, the carbon-containing compounds begin to decompose and graphene is formed on the surface of the copper substrate;

[0026] Using the above-mentioned four-sided heating device stacking scheme, a single reaction can grow into a stable, high-quality graphene film with an area of ​​2*10 6 mm 2 .

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Abstract

The invention relates to the field of film growth or film preparation, in particular to the field of large-batch preparation of large-area films through deposition on substrates and similar devices. The invention is to provide a method for constructing a constant-temperature region by multi-surface heating in vacuum, so that the problem of substrate atom evaporation under high temperature can be solved, and the growth of large-area films can be synchronously realized. A heating solution capable of preparing large-area film materials in batches is characterized in that a multi-surface heating design method or a similar device (1) can construct the constant-temperature region with a larger range in vacuum; and atoms (4) evaporated from the surfaces of the substrates are deposited on the opposite substrates (2) to realize mutual compensation, so that the film morphology defect caused by evaporation of the atoms on the surfaces of the substrates under high temperature can be effectively prevented, and the growth of the large-area films can be realized.

Description

technical field [0001] The invention relates to the field of thin film growth or thin film preparation, more precisely, it relates to the field of depositing on a substrate and preparing large-area thin films in batches. Background technique [0002] Thin-film materials and related thin-film devices emerged in the 1960s and are the products of new theories and high-tech crystallization. With the rapid development of modern science and technology, many fields need to use a large number of new inorganic materials or thin film materials with different functions, such as graphene, hexagonal boron nitride, etc. The combination of thin film materials and components has become the core foundation of electronics, information, sensors, optics, solar energy and other technologies. In general, thin film materials must be of high purity in order to achieve the desired performance. In order to obtain high-purity products, the scientific and technological circles have also invented many...

Claims

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Application Information

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IPC IPC(8): C23C14/50C23C16/46
Inventor 董国材张祥刘进行王雷
Owner 国成仪器(常州)有限公司
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