Circuit modeling and simulation method representing terahertz quantum cascading laser device multimode effect

Abstract

The invention relates to a circuit modeling and simulation method representing the terahertz quantum cascading laser device multimode effect. The method includes the steps of firstly, establishing a multimode velocity equation set representing carrier transportation characteristics inside a THzQCL active layer; secondly, establishing a physical equation model representing the multimode effect inside the THzQCL; thirdly, obtaining a corresponding equivalent circuit model through variable substitution and simplification; fourthly, establishing an equivalent circuit model representing the electrical characteristics of the input end of the THzQCL; fifthly, establishing an equivalent circuit model representing the luminous power characteristics of the output end of the THzQCL; sixthly, establishing a circuit macro model which comprises an electrical port and an optical power output port, and conducting photoelectric property simulation and output spectral property testing on the basis of the circuit macro model. By means of the circuit modeling and simulation method, the influences of the temperature on various photoelectric properties of the THzQCL can be tested, and imitation and simulation for the photoelectric property and the output multimode effect of the THzQCL can be supported and achieved.

Description

technical field [0001] The invention relates to the field of laser technology, and mainly relates to a circuit modeling method for a novel semiconductor laser, in particular to a circuit modeling and simulation method for characterizing the multimode effect of a terahertz quantum cascade laser. Background technique [0002] Since the world's first terahertz quantum cascade laser (THz QCL) was successfully developed in 2002, among many THz radiation generation methods, QCL is known for its high energy conversion efficiency, small size, portability and easy integration. And other advantages to become the preferred light source in the field of terahertz research in the future. At present, the successfully trial-produced THz QCL devices are mainly QCLs with resonant phonon structures in GaAs / AlGaAs material systems. In addition, researchers have also carried out related design research on Ge / SiGe material systems and InGaAs / AlInGaAs / InP material systems. [0003] THz QCL is a s...

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Problems solved by technology

Although scholars at home and abroad have studied the causes and influencing factors of the multimode effect of Thz QCL devices to varying degrees, and tried to achieve single longitudinal mode selection by improving the coupling efficiency and adopting a waveguide structure with low loss and high distributed feedback, but There is still no effective method to integrate the structural optimization design of the active layer and waveguide layer of the device with the optoelectronic characteristics of the device, especially the simulation of the multimode effect of the device output spectrum

In terms of simulating the multimode effect simulation of THz QCL devices, there is still a lack of applicable method models

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