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Fault detection method and device for IGBT anti-parallel diode

A fault detection and diode technology, applied in the direction of measuring devices, measuring electricity, measuring electrical variables, etc., can solve problems affecting the stability of converters, IGBT reverse breakdown, affecting IGBTs, etc., to achieve accurate judgment results and circuit structure The effect of simplicity and simple detection method

Active Publication Date: 2014-11-26
BEIJING ETECHWIN ELECTRIC
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0002] In the IGBT (Insulated Gate Bipolar Transistor, insulated gate bipolar transistor) module of the converter of the wind turbine, an IGBT antiparallel diode is provided to prevent the IGBT from being broken down when encountering a reverse high voltage, and to protect If there is a fault in the diode, the protection function will not work, and it will easily cause the IGBT to be reversely broken down. If the fault in the diode cannot be detected in time, it will directly affect the normal operation of the IGBT, thereby affecting the stability of the converter. Therefore, there is a need for a fault detection method for the IGBT anti-parallel diode of the wind turbine converter

Method used

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  • Fault detection method and device for IGBT anti-parallel diode
  • Fault detection method and device for IGBT anti-parallel diode
  • Fault detection method and device for IGBT anti-parallel diode

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Embodiment 1

[0017] Such as figure 1 As shown, it is a schematic diagram of the topological structure of the converter of the embodiment of the present invention, and its overall structure is as follows: the generator 1 is connected to the diode rectifier bridge 4 through the main control switch 2 on the generator side, and the power compensation capacitor 3 is connected in parallel to the diode rectifier bridge 4, the diode rectifier bridge 4 is connected to the DC bus 6 after the chopper boost circuit 5, the discharge circuit 7, the brake circuit 8 and the grid side inverter bridge 9 are connected between the positive and negative poles of the DC bus 6, and the grid side The inverter bridge 9 is connected to the grid-side main control switch 11 through a reactor 10 , the pre-charging circuit 12 is connected in parallel with the grid-side main control switch 11 , and the grid-side main control switch 11 is connected to the grid through a transformer 13 .

[0018] Based on the topological ...

Embodiment 2

[0042] Such as Figure 5 As shown, it is a schematic structural diagram of a fault detection device for an IGBT reverse-parallel diode in Embodiment 3 of the present invention, which includes: a data acquisition module 501 for acquiring the grid voltage value, the DC bus voltage value, and the pre-charging process The current measurement value actually flowing through the IGBT anti-parallel diode during the charging process; the current calculation module 502 calculates the calculated value of the current flowing through the IGBT anti-parallel diode according to the grid voltage value, the DC bus voltage value and the pre-charging resistance value; The determination module 503 is configured to determine whether the anti-parallel diode of the IGBT is faulty according to the grid voltage value, the DC bus voltage value, the current measurement value and the current calculation value.

[0043] Further, corresponding to the first embodiment above, there are different fault detecti...

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Abstract

The invention provides a fault detection method and device for an IGBT anti-parallel diode. The fault detection method comprises the steps that power grid voltage values, direct-current bus voltage values and measured values of currents actually passing through the IGBT anti-parallel diode in the pre-charging process are obtained; calculated values of the currents passing through the IGBT anti-parallel diode are calculated; according to the power grid voltage values, the direct-current bus voltage values, the measured current values and the calculated current values, whether faults exist in the IGBT anti-parallel diode is determined. Compared with the prior art, the fault detection method for the IGBT anti-parallel diode is simpler; in addition, in the pre-charging process, a circuit structure of a pre-charging loop is simple, influence on the circuit structure from other parts of a current transformer is little, the faults are judged on the basis of the current and voltage values collected in the pre-charging process, and the judgment result can be more accurate.

Description

technical field [0001] The invention relates to a fault detection method and device for electronic components, in particular to a fault detection method and device for an IGBT antiparallel diode. Background technique [0002] In the IGBT (Insulated Gate Bipolar Transistor, insulated gate bipolar transistor) module of the converter of the wind turbine, an IGBT antiparallel diode is provided to prevent the IGBT from being broken down when encountering a reverse high voltage, and to protect If there is a fault in the diode, the protection function will not work, and it will easily cause the IGBT to be reversely broken down. If the fault in the diode cannot be detected in time, it will directly affect the normal operation of the IGBT, thereby affecting the stability of the converter. Therefore, there is a need for a fault detection method for the IGBT anti-parallel diode of the wind turbine converter. Contents of the invention [0003] The purpose of the embodiments of the pr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/27
Inventor 武立国尹进峰
Owner BEIJING ETECHWIN ELECTRIC
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