Potential barrier cascading quantum well infrared detector

A technology of infrared detectors and quantum wells, which is applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of device detection rate decrease, increase dark current, etc., achieve high quantum efficiency and response rate, and improve quantum efficiency and response The effect of high efficiency, easy and accurate output and reading

Inactive Publication Date: 2014-12-03
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The basic principle of quantum well infrared detector determines that the quantum efficiency of the device is proportional to the absorption coefficient. In order to improve the quantum efficiency of the device, or to greatly increase the responsivity under similar detection conditions, it is necessary to increase the electrons on the ground state of the quantum well. concentration, but the increase of electron concentration directly increases the dark current superlinearly, which directly leads to the decrease of the detection rate of the device.

Method used

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  • Potential barrier cascading quantum well infrared detector
  • Potential barrier cascading quantum well infrared detector
  • Potential barrier cascading quantum well infrared detector

Examples

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example 1

[0028] (1) Growth of thin film materials for multiple quantum well chips:

[0029] The following structure is sequentially grown on the GaAs substrate 1 by molecular number epitaxy (MBE), C 1 For GaAs:Si, the concentration is 10 18 / cm 3 , with a thickness of 0.5 μm; L 1 for Al 0.16 Ga 0.84 As, 40nm thick; QW 1 For GaAs:Si, the concentration is 10 17 / cm 3 , with a thickness of 6.8nm; L 1 ’ for Al 0.16 Ga 0.84 As, with a thickness of 5.65nm; QW 2 For GaAs, the thickness is 2nm; L 2 ’ for Al 0.16 Ga 0.84 As, with a thickness of 3.96nm; QW 3 For GaAs, the thickness is 2.3nm; L 3 ’ for Al 0.16 Ga 0.84 As, with a thickness of 3.1nm; QW 4 For GaAs, the thickness is 2.8nm; L 4 ’ for Al 0.16 Ga 0.84 As, with a thickness of 3.1nm; QW 5 For GaAs, the thickness is 3.3nm; L 5 ’ for Al 0.16 Ga 0.84 As, with a thickness of 3.1nm; QW 6 For GaAs, the thickness is 4nm; L 6 ’ for Al 0.16 Ga 0.84 As, with a thickness of 3.1nm; QW 7 For GaAs, the thickness is 5nm; t...

example 2

[0036] (1) Growth of thin film materials for multiple quantum well chips:

[0037] The following structure is sequentially grown on the GaAs substrate 1 by molecular number epitaxy (MBE), C 1 For GaAs:Si, the concentration is 10 18 / cm 3 , with a thickness of 0.75 μm; L 1 for Al 0.15 Ga 0.85 As, 50nm thick; QW 1 For GaAs:Si, the concentration is 10 17 / cm 3 , with a thickness of 7.6nm; L 1 ’ for Al 0.15 Ga 0.85 As, with a thickness of 5.8nm; QW 2 For GaAs, the thickness is 2.2nm; L 2 ’ for Al 0.15 Ga 0.85 As, with a thickness of 4.1nm; QW 3 For GaAs, the thickness is 2.5nm; L 3 ’ for Al 0.15 Ga 0.85 As, with a thickness of 3.3nm; QW 4 For GaAs, the thickness is 3nm; L 4 ’ for Al 0.15 Ga 0.85 As, with a thickness of 3.3nm; QW 5 For GaAs, the thickness is 3.5nm; L 5 ’ for Al 0.15 Ga 0.85 As, with a thickness of 3.3nm; QW 6 For GaAs, the thickness is 4.2nm; L 6 ’ for Al 0.15 Ga 0.85 As, with a thickness of 3.3nm; QW 7 For GaAs, the thickness is 5.2nm...

example 3

[0044] (1) Growth of thin film materials for multiple quantum well chips:

[0045] The following structure is sequentially grown on the GaAs substrate 1 by molecular number epitaxy (MBE), C 1 For GaAs:Si, the concentration is 10 18 / cm 3 , with a thickness of 1 μm; L 1 for Al 0.14 Ga 0.86 As, 60nm thick; QW 1 For GaAs:Si, the concentration is 10 17 / cm 3 , with a thickness of 8nm; L 1 ’ for Al 0.14 Ga 0.86 As, 6nm thick; QW 2 For GaAs, the thickness is 2.4nm; L 2 ’ for Al 0.14 Ga 0.86 As, with a thickness of 4.3nm; QW 3 For GaAs, the thickness is 2.7nm; L 3 ’ for Al 0.14 Ga 0.86 As, with a thickness of 3.5nm; QW 4 For GaAs, the thickness is 3.2nm; L 4 ’ for Al 0.14 Ga 0.86 As, with a thickness of 3.5nm; QW 5 For GaAs, the thickness is 3.7nm; L 5 ’ for Al 0.14 Ga 0.86 As, with a thickness of 3.5nm; QW 6 For GaAs, the thickness is 4.4nm; L 6 ’ for Al 0.14 Ga 0.86 As, with a thickness of 3.5nm; QW 7 For GaAs, the thickness is 5.4nm; then QW 1 to QW ...

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Abstract

The invention discloses a potential barrier cascading quantum well infrared detector. According to the potential barrier cascading quantum well infrared detector, a compound semiconductor material serves as a substrate, seven potential barrier layers and quantum well layers different in width are grown on the substrate alternately, and based on the cycle, multiple cycles of multi-quantum wells are grown repeatedly. Due to the adoption of the cascading tunneling structure, a photoelectric signal stronger than that of an existing quantum well infrared detector can be generated in a quantum well area at a low temperature under the irradiation of infrared light, and then the potential barrier cascading quantum well infrared detector is more suitable for a quantum well infrared focal plane device.

Description

technical field [0001] The invention relates to a quantum well infrared detector, in particular to a potential barrier cascade quantum well infrared detector. Background technique [0002] In the current quantum infrared focal plane technology, the photosensitive element chip is composed of a number of photoconductive type spatially electrically and optically separated detector pixels. Compared with mercury cadmium telluride detectors, quantum well infrared detectors have the advantages of material growth and mature technology, good uniformity of large-area arrays, high yield, and low cost, but the quantum efficiency is low, so that the responsivity is low. Therefore, the optimization of quantum efficiency and responsivity is particularly important. [0003] The basic principle of quantum well infrared detector determines that the quantum efficiency of the device is proportional to the absorption coefficient. In order to improve the quantum efficiency of the device, or to g...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0352H01L31/101
CPCH01L31/101H01L31/035236
Inventor 李宁李梁廖开升景友亮李志锋甄红楼周孝好王文娟陆卫
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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