Electric beam melting device and method for preparing boron master alloy
A technology of electron beam smelting and boron master alloy, applied in chemical instruments and methods, single crystal growth, polycrystalline material growth, etc., can solve the problems of high production cost, small production capacity, complicated operation, etc., and achieve small segregation behavior, Improved production efficiency and uniform composition
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Embodiment 1
[0029] A method for preparing a boron master alloy using the above-mentioned electron beam smelting device, comprising the following process steps:
[0030] In this embodiment, 200kg of silicon material is processed, which is N-type silicon material, with a purity of more than 6N and a resistivity of 1.5Ω cm; the boron dopant is analytical pure boron powder, which is calculated according to the resistivity and the amount of silicon material. Pure boron powder is 0.015g.
[0031] ① Mixing and charging: mix the silicon material with the boron dopant to obtain the mixed material; place 10kg of the mixed material in equal parts in the left and right crucibles 3, and put the remaining mixed material in equal parts into the feeding hopper 2 of the electron beam melting device .
[0032] In the above technical solution, the doping concentration of the boron dopant is calculated according to the following formula:
[0033] N = 1.330 ...
Embodiment 2
[0043] A method for preparing a boron master alloy using the above-mentioned electron beam smelting device, comprising the following process steps:
[0044] In this embodiment, 300 kg of silicon material is processed, which is P-type silicon material, with a purity of more than 6N and a resistivity of 2Ω·cm; The diameter is less than 1mm, and the diboron trioxide block is calculated according to the resistivity and the amount of silicon material to be 0.0648g.
[0045] ① Mixing and charging: mix the silicon material with the boron dopant to obtain the mixed material; place 50kg of the mixed material in equal parts in the left and right crucibles 3, and put the remaining mixed material in equal parts into the feeding hopper 2 of the electron beam melting device .
[0046] In the above technical solution, the doping concentration of the boron dopant is calculated according to the following formula:
[0047] N = 1.330 ...
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