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Electric beam melting device and method for preparing boron master alloy

A technology of electron beam smelting and boron master alloy, applied in chemical instruments and methods, single crystal growth, polycrystalline material growth, etc., can solve the problems of high production cost, small production capacity, complicated operation, etc., and achieve small segregation behavior, Improved production efficiency and uniform composition

Inactive Publication Date: 2014-12-10
DALIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The traditional master alloy production method is drawn by a single crystal furnace, and its disadvantages are: the output is low, the weight of a single crystal bar pulled out of a traditional single crystal furnace is about 100kg, and the degree of automation is relatively low. The operation is relatively complicated, the volume of the single crystal furnace is small, the drawn single crystal rod is affected by the length and diameter, the production capacity is small, and the production cost is high

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  • Electric beam melting device and method for preparing boron master alloy
  • Electric beam melting device and method for preparing boron master alloy
  • Electric beam melting device and method for preparing boron master alloy

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Embodiment 1

[0029] A method for preparing a boron master alloy using the above-mentioned electron beam smelting device, comprising the following process steps:

[0030] In this embodiment, 200kg of silicon material is processed, which is N-type silicon material, with a purity of more than 6N and a resistivity of 1.5Ω cm; the boron dopant is analytical pure boron powder, which is calculated according to the resistivity and the amount of silicon material. Pure boron powder is 0.015g.

[0031] ① Mixing and charging: mix the silicon material with the boron dopant to obtain the mixed material; place 10kg of the mixed material in equal parts in the left and right crucibles 3, and put the remaining mixed material in equal parts into the feeding hopper 2 of the electron beam melting device .

[0032] In the above technical solution, the doping concentration of the boron dopant is calculated according to the following formula:

[0033] N = 1.330 ...

Embodiment 2

[0043] A method for preparing a boron master alloy using the above-mentioned electron beam smelting device, comprising the following process steps:

[0044] In this embodiment, 300 kg of silicon material is processed, which is P-type silicon material, with a purity of more than 6N and a resistivity of 2Ω·cm; The diameter is less than 1mm, and the diboron trioxide block is calculated according to the resistivity and the amount of silicon material to be 0.0648g.

[0045] ① Mixing and charging: mix the silicon material with the boron dopant to obtain the mixed material; place 50kg of the mixed material in equal parts in the left and right crucibles 3, and put the remaining mixed material in equal parts into the feeding hopper 2 of the electron beam melting device .

[0046] In the above technical solution, the doping concentration of the boron dopant is calculated according to the following formula:

[0047] N = 1.330 ...

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Abstract

The invention relates to an electric beam melting device and method for preparing a boron master alloy, belonging to the field of electric beam melting. The electric beam melting device for preparing the boron master alloy comprises a furnace body which is internally provided with two electronic guns, wherein a crucible is arranged below the electronic guns, a feeding device is arranged above the electronic guns, and a valve for controlling a feeding door to open and close is arranged on a discharge opening of the feeding device. The crucible is provided with a toppling device, and a water cooling copper crucible is arranged below the crucible. By preparing the boron master alloy by means of the device and the method provided by the invention, the one-time ingot forming quantity is improved to 750kg or even tonnage. The production efficiency is greatly improved.

Description

technical field [0001] The invention relates to an electron beam smelting device and method for preparing a boron master alloy, belonging to the field of electron beam smelting. Background technique [0002] The so-called "master alloy" in the photovoltaic industry is an alloy of impurity elements and silicon, mainly referring to boron-silicon alloy. The function of the master alloy is to dope the raw material, and the purpose is mainly to change the donor impurities (such as phosphorus) in the silicon melt. Or the impurity concentration of the acceptor impurity (such as boron), so that the resistivity of the grown single crystal or polycrystal meets the specified requirements. [0003] The traditional master alloy production method is drawn by a single crystal furnace, and its disadvantages are: the output is low, the weight of a single crystal bar pulled out of a traditional single crystal furnace is about 100kg, and the degree of automation is relatively low. The operati...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/06C30B28/06
Inventor 谭毅姜大川王登科石爽李佳艳
Owner DALIAN UNIV OF TECH