3D-TSV (Through Silicon Via) in-situ tension test sample and preparation method thereof

A 3D-TSV, in-situ stretching technology, applied in the preparation of test samples, measuring devices, instruments, etc., can solve the problem that the mechanical properties of the film cannot be completely replaced, the cylindrical material cannot be tested, and the size of the clamping part is too small and other problems to achieve the effect of optimizing multi-step molding design, improving preparation repeatability, and avoiding errors

Inactive Publication Date: 2014-12-10
SHANGHAI JIAO TONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The preparation method of TSV copper in 3D packaging is quite different from that of thin film materials, so the mechanical properties of thin films cannot completely replace those of in situ materials
However, this patent and other film uniaxial stretching methods can only be used for mechanical testing of film materials, and cannot be applied to the testing of cylindrical materials.
The Chinese patent publication number is 102607938A, which provides an in-situ tensile specimen for testing the mechanical properties of TSV copper interconnect materials. The size of the clamping part of the tensile specimen mentioned in the patent is too small, which leads to Very great difficulty in the assembly of the specimen

Method used

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  • 3D-TSV (Through Silicon Via) in-situ tension test sample and preparation method thereof
  • 3D-TSV (Through Silicon Via) in-situ tension test sample and preparation method thereof
  • 3D-TSV (Through Silicon Via) in-situ tension test sample and preparation method thereof

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Embodiment 1

[0044] Such as figure 1 , 2 As shown, this embodiment provides an in-situ tensile sample for testing the mechanical properties of 3D-TSV copper interconnection materials. The in-situ tensile sample includes a sample column part 1, a fixed part 2 and a clip The holding parts 3 are prepared and interconnected by electroplating, wherein:

[0045] The sample column part 1 is a metal column formed in a through-silicon via, and the material of the metal column is copper;

[0046] The fixed part 2 is a metal block that completes the growth together with the sample column part, and replaces the sample column part 1 in the sample column part 1 prepared by electroplating when the clamping part 3 is bent to prevent the test Part 1 of the sample column is deformed; the material of the metal block is copper;

[0047] The clamping part 3 is an electroplated metal with a ring connected to the fixed part 2, and the material is copper or nickel.

[0048] In this embodiment, the shape of the ...

Embodiment 2

[0064] Such as Figure 4 , 5 As shown, this embodiment provides an in-situ tensile sample for testing the mechanical properties of 3D-TSV copper interconnection materials. The in-situ tensile sample includes a sample column part 1, a fixed part 2 and a clip The holding part 3, the sample column part 1, the fixing part 2 and the clamping part 3 are connected to each other by adhesive or welding, wherein:

[0065] The sample column part 1 is a metal column formed in a through-silicon via, and the material is copper;

[0066] The fixed part 2 is a metal block that completes the growth together with the sample column part 1, and is used to provide the clamping part 3 with a sufficient contact area to ensure that the force acts directly on the sample column part 1 during the stretching process. for copper;

[0067] The clamping part 3 is a metal structure connected with the fixed part 2 and has a ring, which is prepared separately and plays a clamping role in actual operation, a...

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Abstract

The invention provides a 3D-TSV (Through Silicon Via) in-situ tension test sample and a preparation method thereof. The test sample comprises a test sample column part, fixing parts and clamping parts, wherein a test sample column is prepared from a dry film as a substitute for positive photoresist, so as to be convenient for growth of a metal column; the fixing parts are electroplated together with the test sample column part and respectively serve as a port for connecting the test sample column part with external, so that the problem that the test sample column is difficult to operate due to small size is solved. In order to facilitate the clamping operation of a test instrument, the clamping parts are prepared via an electroplating, adhesion or welding process; according to the electroplating process, a layer of strip-shaped metal is directly shaped in each a fixing end, the two ends of each strip-shaped metal are provided with rings and each metal is folded to align the rings so as to obtain one clamping part; according to the adhesion or welding process, each clamping part is directly connected with one fixing end by adhesion or welding. In design, the test sample and the method are convenient to operate in whole, the steps are simple and the technology is optimized on the basis of ensuring the accuracy.

Description

technical field [0001] The invention relates to a tensile sample of testing technology, in particular to a mechanical property in-situ tensile sample of TSV copper material which is easy to be clamped and prepared by a micromachining process and an electroplating process and a preparation method thereof. Background technique [0002] In recent years, 3D packaging technology based on TSV (Through Silicon Vias, through-silicon via) has attracted widespread attention. This is because it can not only reduce resistance and feedback time to a great extent, but also increase the integration density of IC and effectively reduce the internal heat of micro devices compared with traditional wire connection. TSV provides a great development space for the improvement and optimization of the performance of microelectronic devices, which is of great significance to the development of the entire IC industry. In the microelectronics industry, there are obvious differences from macroscopic m...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N3/02G01N1/28
Inventor 丁桂甫黄刚王慧颖程萍汪红戴旭涵
Owner SHANGHAI JIAO TONG UNIV
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