Etching solution composition and etching method
A technology of etching solution and composition, which is applied in the manufacture of electrical components, circuits, semiconductors/solid-state devices, etc., and can solve problems such as the inability to obtain thin lines and the inability to control the etching speed
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Embodiment 1
[0053] Etching solution compositions were prepared in the proportions shown in Table 1 to obtain product Nos. 1 to 22 of the present invention. In addition, the balance of content is water.
[0054] Table 1
[0055] Invention Product No.
Embodiment 2
[0061] Form a resist pattern with a line width of 10 μm and an opening of 100 μm on a glass substrate laminated in the order of titanium (30 nm) and copper (500 nm) using a positive liquid resist, and cut the obtained substrate into 10 mm×10 mm , as a test piece, this test piece was subjected to pattern etching by a spraying method using product Nos. 1 to 22 of the present invention at 35° C. and a spray pressure of 0.05 MPa. As for the etching treatment time, only the time required to eliminate the residue between wirings was performed in each etchant, and this time was defined as "optimum etching time".
Embodiment 3
[0071] Form a resist pattern with a line width of 10 μm and an opening of 100 μm on a glass substrate laminated in the order of titanium (30 nm) and copper (500 nm) using a positive liquid resist, and cut the obtained substrate into 10 mm×10 mm , as a test piece, this test piece was subjected to pattern etching by a spray method using product Nos. 2, 4, 5, and 16 of the present invention at 35° C. and a spray pressure of 0.05 MPa. It should be noted that the etching treatment time was 30 seconds longer than the optimum etching time.
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