Amorphous dielectric film and electronic component
A technology of dielectric film and electronic components, which is applied in the direction of fixed capacitor dielectric, fixed capacitance parts, electrical components, etc., can solve the problems of unbearable voltage increase, achieve the goal of improving withstand voltage, maintaining relative permittivity and temperature characteristics Effect
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Embodiment 1
[0052]
[0053] First, a Ti thin film as an underlayer was formed by sputtering to have a thickness of 20 nm on SiO with a thickness of 6 μm on a Si surface of 350 μm. 2 insulating film on the surface of the 10mm x 10mm square substrate.
[0054] Next, a Pt thin film serving as a lower electrode was formed on the Ti thin film formed as described above by sputtering so as to have a thickness of 100 nm.
[0055] The formed Ti / Pt thin film was heat-treated at normal pressure at a heating rate of 400°C / min, a holding temperature of 700°C, and a holding time of 30 minutes in an oxygen atmosphere.
[0056] AFM (Atomic Force Microscope) was used to confirm the unevenness of the heat-treated sample surface, and it was confirmed that the Ra (average wave height) of the lower electrode surface of all samples was 4nm or less, and the Rz (maximum wave height) was 50nm or less. Unusual bumps. The number of measurement points is 9 points, and the scanning range of each point is 10 μm×1...
Embodiment 2
[0088]
[0089] The amount of Ba, Ca, and Sr is set to x=0.3; y=0.35; z=0.35, and the ratio (α) of the total amount to the total amount of Zr and Ti becomes the value shown in Table 2. Weigh BaCO 3 , CaCO 3 , SrCO 3 , ZrO 2 、TiO 2 , to make the target object. Film capacitor samples of Sample Nos. 22 to 28 were produced in the same manner as in Example 1 except for the composition of the target object, and evaluation was performed on Samples No. 22 to 28 in the same manner as in Example 1. The results are shown in Table 2.
[0090] [Table 2]
[0091]
[0092] Sample No.22~26
[0093] From Table 2, it can be confirmed that when the ratio (α) of the total amount of Ba, Ca, and Sr to the total amount of Zr, Ti is in the range of 0.5≤α≤1.5, the withstand voltage is high and the relative permittivity and temperature characteristics will not decrease.
[0094] Sample No.27~28
[0095] From Table 2, it can be confirmed that when the ratio (α) of the total amount of Ba...
Embodiment 3
[0096]
[0097] BaCO was weighed so that the ratio (w) of Zr to Ti became the value shown in Table 3 3 , CaCO 3 , SrCO 3 , ZrO 2 、TiO 2 , to make the target object. Film capacitor samples of Sample Nos. 29 to 32 were produced in the same manner as in Example 1 except for the composition of the target object, and were evaluated in the same manner as in Example 1. The results are shown in Table 3.
[0098] [table 3]
[0099]
[0100] Sample No.29~32
[0101] It can be seen from Table 3 that in a dielectric film composed of an amorphous composition mainly composed of A-B-O, B containing Zr element further contains Ti element, and when the content thereof is within the preferred range of the present invention, the relative dielectric film The electrical constant and temperature characteristics do not deteriorate, and the effect of improving the withstand voltage can be achieved.
[0102] Sample No.33
[0103] It can be seen from Table 3 that in the dielectric film ...
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