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Manufacturing method of electrostatic chuck, electrostatic chuck, and plasma processing apparatus

A technology of electrostatic chuck and manufacturing method, which is applied in the direction of electric solid device, semiconductor/solid device manufacturing, circuit, etc., can solve the problem of destroying the adhesive force between the main body and the base adhesive, easily exceeding 100°C, and falling off the main body, etc. problems, to achieve the effect of enhancing anti-plasma performance, avoiding structural instability, and improving service life

Active Publication Date: 2017-09-08
ADVANCED MICRO FAB EQUIP INC CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when PEPVD is used to deposit the corrosion-resistant coating, the temperature of the electrostatic chuck will easily exceed 100°C as the process time increases, which will seriously damage the adhesion of the adhesive between the main body and the base, and even cause the main body Part falls off from the base, resulting in damage to the electrostatic chuck

Method used

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  • Manufacturing method of electrostatic chuck, electrostatic chuck, and plasma processing apparatus
  • Manufacturing method of electrostatic chuck, electrostatic chuck, and plasma processing apparatus
  • Manufacturing method of electrostatic chuck, electrostatic chuck, and plasma processing apparatus

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Embodiment Construction

[0049] In order to make the content of the present invention clearer and easier to understand, the content of the present invention will be further described below in conjunction with the accompanying drawings. Of course, the present invention is not limited to this specific embodiment, and general replacements known to those skilled in the art are also covered within the protection scope of the present invention.

[0050] The manufacturing method of the electrostatic chuck of the present invention will be described in detail below.

[0051] figure 1 Shown is the schematic flow sheet of manufacturing method of the present invention, and it comprises the steps:

[0052] Step S1: Manufacture the main body and the base of the electrostatic chuck.

[0053] Step S2: connecting the main body and the base as a whole to form an electrostatic chuck.

[0054]Among them, the electrostatic chuck base is generally made of metal such as aluminum, titanium alloy, or stainless steel, which...

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Abstract

The invention discloses a manufacturing method of an electrostatic suction cup. The manufacturing method comprises the step of manufacturing a body and a base of the electrostatic suction cup and the step of connecting the body and the base into a whole. According to the step of manufacturing the body of the electrostatic suction cup, a ceramic substrate and a thin film electrode are formed, wherein the thin film electrode is embedded in the ceramic substrate or formed above the ceramic substrate; plasma erosion resisting protection layers are deposited on the ceramic substrate and the thin film electrode; the upper surfaces of the protection layers are imaged to form the body of the electrostatic suction cup. According to the manufacturing method, the plasma erosion resisting performance and the structural stability of the electrostatic suction cup can be effectively improved, and the service life of the electrostatic suction cup can be effectively prolonged.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for manufacturing an electrostatic chuck, an electrostatic chuck and a plasma processing device including the electrostatic chuck. Background technique [0002] In recent years, with the development of semiconductor manufacturing technology, plasma treatment technology has been widely used in the manufacturing process of semiconductor components. The above processes, such as deposition and etching processes, are generally performed in a plasma processing device. Generally, a plasma processing device includes a chamber, a gas showerhead for supplying process gas from a gas supply source to the chamber, and an electrostatic chuck (ESC) for fixing and supporting a substrate. The electrostatic chuck is usually arranged at the bottom of the chamber of the plasma processing device, and is connected to the RF power source as the lower electrode, and the gas shower he...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/683H01J37/32
CPCH01J37/32458H01L21/6831H01L21/6833H01L2221/68304
Inventor 贺小明陈星建
Owner ADVANCED MICRO FAB EQUIP INC CHINA