Perovskite solar battery made of silicon-based thin-film materials and manufacturing method thereof

A technology of solar cells and silicon-based thin films, applied in the field of solar cells, can solve problems such as limiting the industrial application process of perovskite cells, avoid p-type hole transport layer technology, accelerate promotion, and improve short-circuit current and open-circuit voltage Effect

Inactive Publication Date: 2015-01-07
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

[0004] However, the existing high-efficiency perovskite cells with an efficiency exceeding 15% all use the organic compound spiro-OMeTAD as the p-type hole transport layer (HTM) without exception, and its price is ten times that of go...

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  • Perovskite solar battery made of silicon-based thin-film materials and manufacturing method thereof
  • Perovskite solar battery made of silicon-based thin-film materials and manufacturing method thereof
  • Perovskite solar battery made of silicon-based thin-film materials and manufacturing method thereof

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Embodiment Construction

[0036] see figure 1 As shown, the present invention provides the working principle of the perovskite solar cell of silicon-based thin film material, which is briefly described as follows:

[0037] For perovskite solar cells with NIP structure, the bottom of the conduction band of the perovskite material is -3.93eV (relative to the vacuum energy level), the top of the valence band is -5.43eV, and the p-type amorphous film passes carbon, nitrogen, oxygen Such alloy doping can adjust the conduction band edge and valence band edge to be higher than the corresponding band edge of the perovskite I layer, forming a discrete energy band structure such as figure 1 As shown in (a), the energy band structure in the absence of light and thermal equilibrium is as follows figure 1 As shown in (b), the Fermi level reaches unity at this time. The heterostructure formed after connection is suitable for transporting holes from the perovskite I layer to the P-type layer, but the electrons are ...

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Abstract

The invention provides a perovskite solar battery made of silicon-based thin-film materials and a manufacturing method of the perovskite solar battery. The perovskite solar battery made of the silicon-based thin-film materials structurally comprises conductive glass, an n-type electron transfer layer arranged on the conductive glass, a perovskite photosensitive layer arranged on the n-type electron transfer layer, a p-type hole transfer layer arranged on the perovskite photosensitive layer and a metal counter electrode arranged on the p-type hole transfer layer. The perovskite solar battery and the manufacturing method have the advantages that the p-type silicon-based thin-film materials low in cost and easy to combine are adopted as the hole transfer layer, expensive spiro-OMeTAD organic materials are replaced, and the long wave response and battery efficiency of the silicon solar battery are improved.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a silicon-based thin-film material perovskite solar cell and a preparation method thereof. Background technique [0002] The current thin-film batteries are mainly represented by cadmium telluride (CdTe) and copper indium gallium selenide solar (CIGS) batteries. The conversion efficiency of small-area batteries reported in the world has reached 19.6% and 19.8% respectively. However, the above-mentioned thin-film battery preparation materials involve expensive rare elements tellurium, indium, gallium, and cadmium elements that have great pollution to the human body and the environment, so the development of these thin-film batteries at the level of total installed capacity of terawatts in the future will be greatly restricted. . [0003] Recently, new perovskite-structured thin-film solar cells, which are an "upgraded version" of dye-sensitized cells, have attracted great int...

Claims

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Application Information

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IPC IPC(8): H01L31/0445H01L31/0256H01L31/18
CPCH01L31/0256H01L31/06H01L31/1864Y02E10/50Y02P70/50
Inventor 梁鹏韩培德廖显伯向贤碧
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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