Perovskite solar battery made of silicon-based thin-film materials and manufacturing method thereof
A technology of solar cells and silicon-based thin films, applied in the field of solar cells, can solve problems such as limiting the industrial application process of perovskite cells, avoid p-type hole transport layer technology, accelerate promotion, and improve short-circuit current and open-circuit voltage Effect
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[0036] see figure 1 As shown, the present invention provides the working principle of the perovskite solar cell of silicon-based thin film material, which is briefly described as follows:
[0037] For perovskite solar cells with NIP structure, the bottom of the conduction band of the perovskite material is -3.93eV (relative to the vacuum energy level), the top of the valence band is -5.43eV, and the p-type amorphous film passes carbon, nitrogen, oxygen Such alloy doping can adjust the conduction band edge and valence band edge to be higher than the corresponding band edge of the perovskite I layer, forming a discrete energy band structure such as figure 1 As shown in (a), the energy band structure in the absence of light and thermal equilibrium is as follows figure 1 As shown in (b), the Fermi level reaches unity at this time. The heterostructure formed after connection is suitable for transporting holes from the perovskite I layer to the P-type layer, but the electrons are ...
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