High-integration-level and high-mobility-ratio source, drain and gate auxiliary control type junction-free transistor

Abstract

The invention relates to a high-integration-level and high-mobility-ratio source, drain and gate auxiliary control type junction-free transistor. Two independently-controlled gate electrodes including the source and drain control gate electrode and the gate electrode are adopted, so that the high mobility ratio of the device in a channel with the low doping concentration can be guaranteed, and the device mobility ratio reduction and the device stability reduction caused by strengthening of the random scattering effect under the high doping concentration are avoided; meanwhile, the low source and drain resistance can be obtained through the independent control effect of the source and drain control gate electrode and the gate electrode, and therefore the contradictions that the source and drain resistance will be increased if the doping concentration of a channel of a common junction-free transistor is excessively low, and the device mobility ratio reduction and the device stability reduction will be caused if the doping concentration is excessively high are overcome; in addition, the groove-shaped channel design is adopted; compared with a common plane structure, on the premise that a chip area is not additionally increased, the effective channel length is obviously increased to reduce the short channel effect of the device under the deep nanoscale, and therefore the high-integration-level and high-mobility-ratio source, drain and gate auxiliary control type junction-free transistor is suitable for application and popularization.

Description

technical field [0001] The invention belongs to the field of ultra-large-scale integrated circuit manufacturing, and in particular relates to a high-integration, high-mobility, source-drain-gate auxiliary-controlled junctionless transistor structure suitable for ultra-high-integration integrated circuit manufacturing. Background technique [0002] The basic unit of integrated circuits, MOSFETs, transistors, with the continuous reduction in size, need to achieve multiple orders of magnitude concentration differences within a distance of several nanometers to form extremely steep source and drain PN junctions. Such a concentration gradient is essential for doping And heat treatment process has extremely high requirements. The above problems can be effectively solved by junction-free field-effect transistors fabricated on SOI wafers. Junction-free transistors adopt multi-subconduction, and the source, drain and channel regions of the device have the same high doping concentrat...

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Problems solved by technology

However, such a highly doped channel will lead to a significant decrease in the mobility of the device, and the random scattering of impurities will seriously affect the reliability of the device.

In order to improve the mobility and reliability of junctionless devices, it is necessary to reduce the doping concentration of the silicon film, but the

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