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Hall electromotive force correction device and hall electromotive force correction method

A technology of a calibration device and a calibration method, which is applied in the direction of measuring devices, Hall effect devices, special recording/indicating devices, etc., and can solve problems such as changes in the magnetic sensitivity of semiconductor integrated circuits

Active Publication Date: 2015-01-21
ASAHI KASEI ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, there is a problem that the magnetic sensitivity of the semiconductor integrated circuit of the magnetic sensor changes depending on the usage environment.

Method used

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  • Hall electromotive force correction device and hall electromotive force correction method
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  • Hall electromotive force correction device and hall electromotive force correction method

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0164] Figure 6 It is a structural block diagram for explaining Embodiment 1 of the Hall electromotive force correction device related to the present invention, and reference numeral 11 in the figure denotes a Hall element, 12 denotes a chopper switch, and 13 denotes a Hall resistance measuring section (A / D conversion circuit), 14 denotes a Hall electromotive force measurement section (A / D conversion circuit), 15 denotes a temperature sensor (temperature measurement section), 16 denotes an A / D conversion circuit, 19 denotes a Hall electromotive force correction section, and 20 denotes a correction signal 21 denotes a correction coefficient calculation circuit, 22 denotes a Hall electromotive force correction circuit, 23 denotes a Hall driving current source, 24 denotes a magnetic sensitivity temperature characteristic information storage section, 25 denotes a resistance value temperature characteristic information storage section, and 26 denotes a piezoelectric Coefficient t...

Embodiment 2

[0222] Figure 12 It is a block diagram illustrating the configuration of Embodiment 2 of the Hall electromotive force correction device according to the present invention, and reference numeral 31 in the figure denotes a shared A / D conversion circuit. In addition, pairs with Figure 6 Structural elements with the same function are assigned the same reference signs. In addition, symbols of the Hall resistance measuring section 13 and the Hall electromotive force measuring section 15 are omitted.

[0223]The Hall electromotive force correction device of the second embodiment includes an A / D conversion circuit 31 shared by the Hall resistance measurement unit 13 , the Hall electromotive force measurement unit 14 , and the temperature measurement unit 15 . That is, the resistance value from the Hall resistance measuring unit 13 , the Hall electromotive force from the Hall electromotive force measuring unit 14 , and the temperature value from the temperature measuring unit 15 ar...

Embodiment 3

[0226] Figure 13 It is a structural block diagram for explaining Embodiment 3 of the Hall electromotive force correction device according to the present invention, and is a structural block diagram configured to correct the Hall electromotive force by using a Hall driving current, Figure 14 yes Figure 13 The block diagram of the Hall drive current source is shown. Reference numeral 32 in the figure denotes an A / D conversion circuit 32 shared by the Hall resistance measurement section 13 and the temperature measurement section 15 . In addition, pairs with Figure 6 Structural elements with the same function are assigned the same reference signs. In addition, the symbols of the Hall resistance measuring unit 13 and the Hall electromotive force measuring unit 14 are omitted.

[0227] The Hall electromotive force correction device of the third embodiment corrects the Hall electromotive force according to the correction coefficient K from the correction coefficient calculati...

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Abstract

The present invention pertains to a Hall electromotive force correction device and Hall electromotive force correction method for highly accurately correcting the magnetic sensitivity of a Hall element by correcting the stress and correcting the temperature, while reducing an increase in layout surface area or increase in current consumed. A Hall resistance measurement unit (13) measures the Hall resistance value (VR) in two or more directions of conduction between a plurality of electrodes belonging to a Hall element (11). A Hall electromotive force measurement unit (14) measures the Hall electromotive force (VH) of the Hall element. A temperature measurement unit (15) measures the ambient temperature of the Hall element. A correction signal generation unit (20) corrects the Hall electromotive force on the basis of the Hall resistance value given by the Hall resistance measurement unit and the temperature output value (T) of the temperature measurement unit. A correction factor computation circuit (21) calculates a correction factor (K) from the Hall resistance value measured by the Hall resistance measurement unit and the temperature output value measured by the temperature measurement unit. The correction factor comprises a stress correction factor (Ksigma) and a temperature correction factor (KT).

Description

technical field [0001] The present invention relates to a Hall electromotive force correction device and a Hall electromotive force correction method, more specifically, to a Hall electromotive force correction device and a Hall electromotive force correction device capable of simultaneously correcting the influence of stress applied to a Hall element and the influence of temperature. Electromotive force correction method. Background technique [0002] Conventionally, as a magnetic sensor semiconductor integrated circuit incorporating a Hall element, a current sensor that detects a magnetic field generated by a current, a rotation angle sensor that detects rotation of a magnet, and a position sensor that detects movement of a magnet are known. [0003] It is known that the magnetic sensitivity of such a Hall element changes according to a change in temperature. Therefore, in order to correct the magnetic sensitivity of the Hall element with high precision, it is necessary t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R33/07H01L43/06
CPCH01L43/06G01R33/07G01D3/0365G01D5/145H10N52/00G01D5/142G01K13/00G01R35/00
Inventor 藤田泰介冈武茂树
Owner ASAHI KASEI ELECTRONICS CO LTD
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