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Measurement method for distribution information of Si(111) material stress along surface normal
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A technology for surface normal and distribution information, which is applied in the field of microelectronics and can solve the problem that the X-ray diffractometer cannot obtain the information of stress distribution along the surface normal.
Active Publication Date: 2015-01-28
XIDIAN UNIV
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[0007] The object of the present invention is to provide a kind of Si (111) material stress along the measuring method of the information of surface normal distribution, to solve this problem that prior art can not obtain the information of stress distribution along surface normal with x-raydiffractometer
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Embodiment 1
[0024] Example 1, taking the interplanar spacing of the (220) crystal plane in the stress-free state as a reference, the (111) in-plane stress component ε distributed along the surface normal of the Si (111) material i / / and [111] the axial stress component ε i ⊥ Take measurements.
[0026] In this example, the X-ray diffractometer of Bruker D8Discover system equipped with Ge(220) four-crystal monochromator and three-axis crystal is selected but not limited. The x-ray diffractometer is equipped with an x-ray source, an x-ray detector, a vacuum pump and a stage.
[0027] The stage is provided with three axes of rotation, which are respectively ω-axis, χ-axis and φ-axis, wherein the ω-axis is parallel to the stage and perpendicular to the plane formed by the x-ray incident beam and the x-ray detector, and the χ-axis Parallel to the stage and perpendicular to the ω-axis, the φ-axis is perpendicular to the stage, and the detec...
Embodiment 2
[0056] Example 2, taking the interplanar spacing of the (220) crystal plane obtained under oblique symmetric diffraction as a reference, the (111) in-plane stress component ε distributed along the surface normal of the Si (111) material i / / and [111] the axial stress component ε i ⊥ Take measurements.
[0058] This step is the same as Step 1 of Example 1.
[0059] Step B, placing the material to be tested.
[0060] This step is the same as Step 2 of Example 1.
[0061] Step C, aligning the (111) crystal plane in the Si (111) material.
[0062] The specific implementation of this step is the same as that of step 3 in Embodiment 1.
[0063] Step D, aligning the (220) crystal plane in the Si (111) material.
[0064] The specific implementation of this step is the same as step 4 of Embodiment 1.
[0065] Step E, obtaining Bragg angles of (220) crystal planes at different X-ray penetration depths.
[0066] refer to figur...
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Abstract
The invention discloses a measurement method for distribution information of Si(111) material stress along a surface normal, mainly solving the problem in the prior art that the distribution information of the stress along the surface normal cannot be obtained by an x-raydiffractometer. The measurement method comprises the technical steps as follows: horizontally putting a Si(111) material on an x-raydiffractometer objective table; sequentially carrying out beam focusing on crystal faces (111) and (220) in the Si(111) material; subtracting the transmission depth of x rays by step length not being less than 50nm and obtaining a Bragg angle of the crystal face (220) under each transmission depth; substituting one group of the measured Bragg angle into a Bragg equation to obtain a face distance of one group of the crystal face (220); and calculating the distribution information of the Si(111) material stress along the surface normal according to one group of the face distance. The measurement method is low in testing cost and has no damages on tested materials; and the distribution information of one group of the stress along the surface normal can be obtained.
Description
technical field [0001] The invention belongs to the technical field of microelectronics, and relates to a method for measuring semiconductor materials, in particular to a method for measuring stress distribution information of Si(111) material along the surface normal, which can be used for analyzing the stress of Si(111) material. technical background [0002] Si material has the advantages of abundant reserves, low price, and easy growth of large-size high-purity single crystals. At present, Si material is still in the core position in the semiconductor industry and electronic information industry. More than 90% of semiconductor devices and almost all integrated circuits are based on Si(100), Si(110) and Si(111) materials. Although the level of Si-based integrated circuit technology is very high, n-type or p-type doping of various elements is used in Si substrates and epitaxial materials to change the resistivity of materials, and local or global thermal diffusion or ion i...
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