Multi-chip type high-voltage driving circuit

Abstract

The invention provides a multi-chip type high-voltage driving circuit and belongs to the technical field of a semiconductor power device. The multi-chip type high-voltage driving circuit comprises a low-end circuit, a transverse power device, a high-end circuit, a bonding metal wire, a first chip and a second chip, wherein the low-end circuit and the transverse power device are integrated on the first chip, the substrate of the first chip has logic ground potential, the high-end circuit is integrated on the second chip, the substrate of the second chip has floating ground potential, the first chip and the second chip are connected through the bonding metal wire, and the bonding metal wire is connected with the high-voltage end of the transverse power device and the high-end circuit. According to the invention, through increasing the distance between an interconnection line and a device surface, the unfavorable influence exerted by the interconnection line on withstand voltage of a device is reduced; the circuit structure avoids electric leakage between a high-end circuit area and the transverse power device for level displacement; and at the same time, the chip substrate integrated in the high-end circuit area has the floating ground potential, such that PNP break-through between a surface device in the high-end circuit area and a substrate is avoided.

Description

technical field [0001] The invention belongs to the technical field of semiconductor power devices, and specifically relates to a multi-chip high-voltage drive circuit. Background technique [0002] Power integrated circuits have made tremendous progress in areas such as communication, power management, and motor control, and will continue to receive wider attention. The integration of high-voltage devices and low-voltage control circuits in power integrated circuits brings a series of benefits, but it also poses severe challenges to circuit design. [0003] With the increase of integration and higher interconnection voltage requirements, the high voltage interconnection (High voltage Interconnection, HVI) with high potential across the lateral double diffused metal oxide semiconductor field effect transistor LDMOS (Lateral Double- Diffused MOSFET) and other high-voltage devices and the partial area on the surface of the isolation region will lead to local concentration of ...

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Problems solved by technology

At the same time, because in this structure, the low-end circuit, LDMOS and high-end circuit are located on the same chip, that is, the substrate of the low-end circuit area is connected to the substrate of the high-end circuit area, so the substrate of the high-end circuit area has a logical ground potential, However, the operating voltage of the device in the high-end circuit area is usually high, and PNP punch-through will occur between the P-type well region on the surface, the N-type epitaxial layer and the P-type substrate, which will affect the normal operation of the device.

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