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Nonvolatile memory cell and memory

A non-volatile storage and storage circuit technology, which is applied in the field of semiconductor storage, can solve the problems of long time consumption and achieve good results and long data retention

Active Publication Date: 2015-02-11
APEX MICROELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The present invention provides a non-volatile storage unit and a memory, which are used to solve the problem that the process of writing data in the existing memory takes a long time, shorten the time-consuming time of writing data, and simplify writing and reading data operate

Method used

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  • Nonvolatile memory cell and memory

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Experimental program
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Embodiment 1

[0022] image 3 It is a schematic structural diagram of a non-volatile memory unit provided by Embodiment 1 of the present invention. Such as image 3 As shown, the non-volatile storage unit may include: a differential storage circuit 3 , a write circuit and a read circuit.

[0023] Among them, the input terminal of the data to be stored in the write circuit is used to input the data DIN to be stored, the input terminal of the read and write signal of the write circuit is used to input the read and write signal WRITE, and the write circuit is used to read and write data according to the input data DIN and the input to be stored. The write signal WRITE outputs a storage control signal to control the differential storage circuit 3 to store data; the input end of the differential storage circuit 3 is connected to the write circuit, and the differential storage circuit 3 includes two sets of storage components. In one storage cycle, one set The storage component performs a progr...

Embodiment 2

[0050] Figure 6 A schematic structural diagram of the memory provided by Embodiment 2 of the present invention, such as Figure 6 As shown, the memory includes a read-write controller and a plurality of storage units, and the storage units adopt the non-volatile storage units provided by the above-mentioned embodiments to store and read data. According to the data and control information input from the outside, the read-write controller generates corresponding signals and outputs them to each storage unit to complete the data access. After the data is written, it can output the data stored in all storage units in parallel. Without an additional sense amplifier circuit, for the non-volatile memory unit in the above embodiment, the read-write controller at least generates data to be stored and read-write signals. The connection relationship among the storage units may refer to the common connection manner in the prior art, which is not limited in this embodiment.

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Abstract

The invention provides a nonvolatile memory cell and memory. Specifically, the nonvolatile memory cell includes: a differential memory circuit, a write circuit and a readout circuit. The write circuit is used for outputting a memory control signal according to input to-be-memorized data and a read-write signal so as to control the differential memory circuit in terms of data memory. The differential memory circuit includes two sets of memory components, in one memory cycle, one of the two sets of memory components executes programming operation according to the memory control signal, and the other set of memory component executes erasure operation according to the memory control signal. And the readout circuit is used for reading out the data memorized in the differential memory circuit according to the read-write signal. The nonvolatile memory cell and memory provided by the invention can solve the time-consuming problem in a data write-in process of existing memory, and is used for shortening the time consumed by write data and simplify the write and read data operation.

Description

technical field [0001] The invention relates to semiconductor memory technology, in particular to a non-volatile memory unit and memory. Background technique [0002] Electrically Erasable Programmable Read-Only Memory (EEPROM for short) is a non-volatile memory whose data is not lost after power failure, including a read-write controller and multiple storage units. The multiple storage units are used to store data, and the read-write controller sends initialization signals, read-write signals, and data to be stored to the multiple storage units to control the multiple storage units to program and erase data. The storage unit includes a selection transistor and a storage transistor, wherein the storage transistor is usually a floating gate transistor for storing data. Floating gate transistors are divided into Stacked-Gate Injection Metal Oxide Semiconductor (SIMOS) transistors, Floating-Gate Tunnel Oxide Metal Oxide Semiconductor (Floating-Gate Tunnel Oxide Semiconductor, ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/06G11C16/26G11C16/34
Inventor 杨慧玲郭建国王雄伟
Owner APEX MICROELECTRONICS CO LTD
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