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Preparation method of InGaN/Si three-junction solar cell

A technology for solar cells and batteries, applied in the field of solar cells, can solve the problems of not making full use of the solar spectrum, increasing the complexity of the epitaxy process, reducing the total conversion efficiency of the battery, etc., so as to improve the radiation resistance, prolong the service life, and improve the conversion efficiency. Effect

Inactive Publication Date: 2015-02-11
CHINA ELECTRONIC TECH GRP CORP NO 18 RES INST
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The patent applications retrieved above all use Si as the substrate to prepare InGaN solar cells, which solves the problems of lattice mismatch and thermal expansion mismatch, but the first two reduce the total conversion of the cell due to the increase in the complexity of the epitaxy process. Efficiency, which increases production costs; the latter two are two-junction solar cells, which cannot make full use of the solar spectrum

Method used

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  • Preparation method of InGaN/Si three-junction solar cell
  • Preparation method of InGaN/Si three-junction solar cell

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preparation example Construction

[0023] The preparation method of InGaN / Si triple-junction solar cells includes depositing an n-Si layer on one side of the n-Si substrate by MOCVD technology to form a Si bottom cell, and sequentially growing 50-100nm thick AlN on the n-Si layer of the Si bottom cell Nucleation layer, 0.5-2μm thick GaN buffer layer, 50nm-350nm thick In x Ga 1-x N first cell, 10nm-50nm thick tunnel junction and 50nm-350nm thick In y Ga 1-y N second battery;

[0024] The innovation of the present invention is to also include the following preparation steps:

[0025] ⑴In y Ga 1-y Evaporate a 150-350nm translucent current spreading layer on the N second battery, put it in an annealing furnace after evaporation, 350-500°CN 2 Under the environment, anneal for 10-20 minutes, and cool to room temperature with the furnace;

[0026] (2) After coating the photoresist on the translucent current spreading layer after the annealing treatment, a comb-shaped groove with a depth of 50-100nm is photoetch...

Embodiment

[0033] Step 1, select n-Si after ultrasonic cleaning as the substrate;

[0034] Step 2. Using Metal Organic Chemical Vapor Deposition (MOCVD), place the n-Si substrate in the reaction chamber and inject TMAl and NH 3 , as the temperature rises, Al atoms begin to diffuse into the n-Si layer to replace Si atoms, and a p-Si layer is formed on the n-S substrate to form a Si bottom cell 1; ) growing an AlN nucleation layer 2 with a thickness of 50-100nm (optimum 60nm);

[0035] Step 3, using metal organic chemical vapor deposition technology to grow GaN buffer layer 3 on the AlN nucleation layer, the growth temperature is 900-1100 °C, and the thickness range is 0.5-2 μm. This layer can reduce the defect density of the epitaxial layer, thereby improving crystal quality;

[0036] Step 4, growing In on the GaN buffer layer x Ga 1-x N first cell 4, comprising Si-doped n-In x Ga 1-x N-layer and Mg-doped p-In x Ga 1-x N layer, the growth temperature is 600-1100°C (the optimum val...

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Abstract

The invention relates to a preparation method of an InGaN / Si three-junction solar cell. The method includes the following step: growing sequentially an AlN nucleating layer, a GaN buffer layer, an In<x>Ga<1-x>N first cell, a tunnel junction and an In<y>Ga<1-y>N second cell on an n-Si layer of a Si-bottom cell. The method is characterized in that vapor deposition of a semitransparent current expansion layer is carried out on the second cell and then annealing is carried out; a photoetching comb-shaped groove of the semitransparent current expansion layer is used as a positive electrode area; vapor deposition of Ni / Au positive electrodes is carried out in the positive electrode area; and vapor deposition of a Ti / Pd / Ag negative electrode is carried out on the other face of the n-Si substrate. Because vapor deposition of the negative electrode is directly carried out beneath the substrate of the bottom cell, the process is simplified and the cost is reduced and the negative electrode can also be used as a reflector so that solar spectrum is fully used and the total conversion efficiency of the cell reaches up to more than 40%; and through vapor deposition of the semitransparent current expansion layer, collection of current carriers by the positive electrodes is enhanced so that the anti-radiation capability of the cell is improved and the service life of the cell is prolonged.

Description

technical field [0001] The invention belongs to the technical field of solar cells, in particular to a preparation method of an InGaN / Si triple-junction solar cell. Background technique [0002] The known energy sources are non-renewable. After years of mining, the reserves of these energy sources are decreasing day by day, and they will cause serious environmental problems after use. Therefore, people are inexhaustible to solar energy. More and more attention has been paid to green energy, and for a long time, they have been tirelessly looking for materials with high conversion efficiency of solar energy. In recent years, the third-generation semiconductor materials represented by GaN, InGaN, and AlGaN—group III nitrides have been a hot research topic, and they are mainly used in optoelectronic devices and high-temperature, high-frequency, and high-power devices. The research results in 2002 showed that the forbidden band width of InN was not 1.89eV as previously reported ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCH01L31/022425H01L31/18Y02E10/50Y02P70/50
Inventor 张启明王帅高鹏吴艳梅刘如彬孙强肖志斌
Owner CHINA ELECTRONIC TECH GRP CORP NO 18 RES INST