Film forming method of induction material in deep groove

Abstract

The invention discloses a film forming method of an induction material in a deep groove. Before an induction material for preparing a film is painted on a silicon sheet and a final pattern is etched on the film, the following steps should be performed in advance: (1) a first photoresist with an absorption spectrum of 193 to 635 nm and a threshold energy of 5 mj more or less is painted on an induction material; (2) baking, painting a photoresist solvent to dissolve the first photoresist on the silicon sheet surface to preserve the first photoresist in the deep groove; (3) painting a second photoresist with an absorption spectrum different from the first photoresist; (4) exposing and developing to form required patterns on the photoresist in the silicon sheet surface and the side surfaces and bottom of the deep groove. In the provided film forming method, the differences of absorption spectrums and performances of different photoresists are utilized, a certain photoresist morphology is formed through two times of photoresist painting, the morphology of photoresist is successfully improved, and the quality of induction films eventually formed in the side walls and bottom of the deep groove is improved.

Description

technical field [0001] The invention relates to the field of integrated circuit manufacturing, in particular to a method for forming a film of an inductive material in a deep trench. Background technique [0002] Micro-Electro-Mechanical Systems (MEMS) is a multidisciplinary frontier research field developed on the basis of microelectronics technology. As far as the semiconductor industry is concerned, the integration of MEMS and production process technology will bring a great leap forward for the system single chip. In the future, it is expected to integrate subsystems such as audio, light, chemical analysis, pressure, and temperature sensing in a single chip, so that chips with sensory functions such as human eyes, nose, ears, and skin can be developed; And the ability to control, it surpasses the ability of the human body. [0003] At present, there are three main technologies commonly used to manufacture MEMS devices: [0004] The first is the method of using traditi...

AI Technical Summary

Problems solved by technology

Due to the use of deep trench technology, when the exposure defines the part of the sensing material that needs to be left by photolithography, it often encounters the bottleneck that photolithography cannot be completed in one step. If positive photoresist (positive photoresist) is used The exposed area of ​​the resist dissolves quickly, ideally the unexposed area remains unchanged, and the negative photoresist is just the opposite), it will happen that the photoresist at the bottom of the trench cannot be exposed by light and at the bottom of the trench Formation of photoresist residues (see figure 1 , 3 ), if a negative-tone photoresist is used, the situation is just the opposite, and the photoresist cannot be retained in the trench and on the sidewalls (see figure 2 , 4 ), the main reason is that the light intensity at the bottom of the deep groove is not enough. At present, only by providing energy or changing the focal length can not achieve satisfactory results

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