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Method for producing polysilicon

A manufacturing method, polysilicon technology, applied in the steam generation method using heat carrier, chemical instruments and methods, sustainable manufacturing/processing, etc., can solve problems such as polymer ignition

Inactive Publication Date: 2015-03-04
TOKUYAMA CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, when the polymer attached to the pipeline is washed and removed, there is also the danger of the polymer in the air igniting

Method used

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  • Method for producing polysilicon
  • Method for producing polysilicon

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0108] follow figure 1 The flow chart shows the steps to manufacture polysilicon. The deposition step of depositing polysilicon is performed by the VLD method.

[0109] The temperature of the silicon precipitation part of the cylindrical reaction vessel 1 was raised to 1300° C., and a source gas was supplied to precipitate silicon. Thereafter, the silicon deposited in the cylindrical reaction container was melted and dropped by controlling the heating of the cylindrical reaction container to 1600° C. in the melting step, and recovered. Silicon is produced by repeating the precipitation step and the melting step.

[0110] In the precipitation step, supply hydrogen 2000Nm 3 / h and trichlorosilane as chlorosilane 1200kg / h (about 200Nm 3 / h) mixed gas (about 2200Nm 3 / h) react as raw material gas. The temperature of the exhaust gas discharged through the precipitation step was measured and found to be 1050°C. In addition, the outlet pressure of the boiler type heat recovery...

Embodiment 2

[0118] In the deposition step, the same operation as in Example 1 was carried out except that hydrogen as a raw material gas was increased.

[0119] Specifically, in the precipitation step, supply hydrogen 3000Nm 3 / h and trichlorosilane as chlorosilane 1200kg / h (about 200Nm 3 / h) mixed gas (about 3200Nm 3 / h) react as raw material gas. In addition, the outlet pressure of the boiler type heat recovery device at the time of a precipitation process was adjusted so that it may become 50 kPaG. As a boiler type heat recovery device, the same device as in Example 1 was used.

[0120] The temperature of the exhaust gas discharged through the precipitation step was measured and found to be 1110°C.

[0121] The exhaust gas temperatures before and after the boiler-type heat recovery device in the precipitation step were 980° C. and 300° C., and the initial pressure difference was about 10 kPa. The overall heat transfer coefficient U is estimated to be 206W m -2 ·K -1 .

[0122] F...

Embodiment 3

[0125] For the exhaust pipe 2 of the boiler-type heat recovery device, use the same inner diameter and number as the exhaust pipe of Example 1, but use an exhaust pipe whose total length is about 1 / 3 of the exhaust pipe of Example 1, and the others are The same operation as in Example 1 was carried out. As a result, the gas temperature at the outlet of the boiler-type heat recovery device was about 450°C. In addition, the flow velocity of the exhaust gas at the outlet of the exhaust pipe in the boiler-type heat recovery device in the precipitation step was 16 m / s.

[0126] The above-mentioned operation was continued for one month, but the pressure difference before and after the boiler-type heat recovery device did not change, and thereafter, in the boiler-type heat recovery device, the gas introduction pipe, and even the exhaust gas from the hydrogen refining treatment device in the exhaust gas cooling step Opening checks are carried out in the processing system, but it is c...

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Abstract

[Problem] The purpose of the invention is to recover heat efficiently from high-temperature exhaust gas generated from a polysilicon deposition step. The purpose of the invention is also to improve the production efficiency by reducing the adhesion and residues of silicon fine powder and polymer in the pipes and equipment, improving the efficiency of the recovery of unreacted raw material gas and the like, lowering the washing frequency, and making possible long-term, continuous operation. [Solution] This method for producing polysilicon comprises: a deposition step for depositing polysilicon using raw material gas containing chlorosilanes; and a heat-recovery step for feeding exhaust gas from the deposition step to a boiler-type heat recovery device provided with an exhaust gas pipe, and recovering the heat; and is characterized in that the outlet gas temperature of the exhaust gas pipe in the boiler-type heat recovery device is set at 200°C or higher and the exhaust gas flow rate at the exhaust gas pipe outlet in the boiler-type heat recovery device is adjusted to 10 m / sec or higher.

Description

technical field [0001] The present invention relates to a method for producing polysilicon, and more particularly to a method for producing polysilicon that can contribute to the reduction of production costs, which includes a step of efficiently recovering heat energy from high-temperature exhaust gas generated in the process of depositing polysilicon, and also includes recovering as needed Step of unreacted raw material gas. Background technique [0002] The Siemens method, the VLD method, and the like are known as methods for producing polycrystalline silicon (also referred to as polysilicon). The Siemens method is to heat the silicon core wire arranged inside the bell-type reaction vessel to the precipitation temperature of silicon, and trichlorosilane (SiHCl 3 ), monosilane (SiH 4 ) and other silane compound gases and hydrogen are supplied here, and polysilicon is deposited on the silicon core wire by chemical vapor deposition to obtain high-purity polysilicon rods. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/03C01B33/035
CPCC01B33/03C01B33/035Y02P20/10F22B1/18
Inventor 崎田学若松智义松信昭
Owner TOKUYAMA CORP
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