Device and method of melting polysilicon powder by electron beam

An electron beam smelting, polysilicon technology, applied in chemical instruments and methods, silicon compounds, inorganic chemistry, etc., can solve the problems of long smelting time and increased energy consumption of electron beam smelting, shorten the smelting time, save manpower and material resources, reduce The effect of energy consumption

Inactive Publication Date: 2015-03-11
DALIAN UNIV OF TECH
View PDF3 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, due to the surface heating characteristics of the electron beam, that is, although the heating local temperature can reach more than 3000°C, the penetration zone of the heating melt is only a dozen millimeters, at most tens of millimeters, which will cause the first block to be added. The solid material will fall into the bottom layer of the raw material melt, and the electron beam can

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Device and method of melting polysilicon powder by electron beam

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0025] Example 1

[0026] Such as figure 1 As shown, an electron beam smelting polysilicon powder device includes a smelting chamber, an electron gun and its vacuum system, a smelting chamber vacuum system, a crucible, and a feeding system. The feeding system includes a feeding bin 2 and an inlet located below it. The silo 3, the feeding silo 2 and the feeding silo 3 are separated by a butterfly valve 9; the bottom of the feeding silo 3 is provided with an inlet 12 that leads to the melting chamber, and the lower end of the inlet 12 is connected to a screw feeder 6. The feeder is connected to the deceleration motor 4 and the time controller 5, and the speed of the deceleration motor 4 is controlled by the time controller 5 to drive the screw feeder 6 to realize a fixed rate of feeding, and the feeding rate can be adjusted. A bulk material port is arranged below the screw feeder, and the diameter of the bulk material port is 5 mm; the diameter of the cross section of the screw fe...

Example Embodiment

[0034] Example 2

[0035] Such as figure 1 As shown, an electron beam smelting polysilicon powder device includes a smelting chamber, an electron gun and its vacuum system, a smelting chamber vacuum system, a crucible, and a feeding system. The feeding system includes a feeding bin 2 and an inlet located below it. The silo 3, the feeding silo 2 and the feeding silo 3 are separated by a butterfly valve 9; the bottom of the feeding silo 3 is provided with an inlet 12 that leads to the melting chamber, and the lower end of the inlet 12 is connected to a screw feeder 6. The feeder is connected to the deceleration motor 4 and the time controller 5, and the speed of the deceleration motor 4 is controlled by the time controller 5 to drive the screw feeder 6 to realize a fixed rate of feeding, and the feeding rate can be adjusted. A bulk material port is arranged below the screw feeder, and the diameter of the bulk material port is 20 mm; the diameter of the cross section of the screw f...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Diameteraaaaaaaaaa
Diameteraaaaaaaaaa
Login to view more

Abstract

The invention relates to a device for melting polysilicon powder by an electron beam and a method for utilizing the device to melt the polysilicon powder and belongs to the field of electron beam melting. The device for melting the polysilicon powder by the electron beam comprises a melting chamber, an electronic gun, a vacuum system of the electronic gun, a melting chamber vacuum system, a crucible and a feeding system and is characterized in that the feeding system consists of a feeding cabin and a material inlet cabin arranged below the feeding cabin, the feeding cabin is isolated from the material inlet cabin by virtue of a butterfly valve; a material inlet which is introduced into the melting chamber is formed in the bottom of the material inlet cabin, and the lower end of the material inlet is connected with a screw feeder; a material level sensor is arranged above the material inlet and is connected with an alarm; a feeding hole is formed in one side of the top of the feeding cabin. According to the device and the method disclosed by the invention, with addition of powdery polysilicon, the phosphorous removal efficiency is improved by more than 30 percent, the melting time is shortened by more than 20 percent, and the energy consumption is lowered.

Description

technical field [0001] The invention relates to a device for smelting polysilicon powder with an electron beam and a method for smelting polysilicon by using the device, belonging to the field of electron beam smelting. Background technique [0002] The technology of electron beam smelting to remove volatile impurities in polysilicon, refractory metals and rare metals is relatively mature. The high energy density, high melting temperature and local overheating of electron beams can effectively remove volatile impurities in raw materials. . At present, because the working environment of electron beam smelting technology is a vacuum condition, the addition and replenishment of raw materials is in the form of lumps with a certain particle size. [0003] However, due to the surface heating characteristics of the electron beam, that is, although the heating local temperature can reach more than 3000°C, the penetration zone of the heating melt is only a dozen millimeters, at most...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C01B33/037
Inventor 谭毅姜大川石爽王登科
Owner DALIAN UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap