Method for determining heavy ion LET value in single event effect experiment for components

Abstract

The invention discloses a method for determining heavy ion LET value in a single event effect experiment for components. By the method, the number of shielding layers is not limited; the problem that shielding layers outnumber by eight with gradually increased metal wiring layers under modern components' technological conditions is solved; and LET value of heavy ion in a silicon material after passing through multilayer shielding can directly be obtained. As present mainstream semiconductor technologies are based on a silicon substrate, LET value in single event effect testing is LET value of heavy ion in silicon. By directly outputting the result, miscalculation of LET value by non-particle physics professional testers can be avoided, and accuracy of test parameters is guaranteed.

Description

technical field [0001] The invention relates to the technical field of space radiation, in particular to a method for determining the LET value of heavy ions in single event effect tests of components. Background technique [0002] In response to the increasing demand for on-orbit information processing, satellites use more and more large-scale logic devices such as FPGAs and DSPs. These large-scale logic devices are affected by high-energy particles in space and produce single event effects such as single event upset (SEU) and single event lock-up (SEL), which will affect the normal and reliable operation of spacecraft, and must be protected by design and verification. [0003] The acquisition of device single event effect parameters required for protection design and the verification of protection design effects are mainly carried out on ground heavy ion accelerators. When the device is irradiated with heavy ions on the ground, the heavy ions pass through the shielding la...

AI Technical Summary

Problems solved by technology

TRIM software is mainly used to analyze the energy deposition of heavy ions in materials. When it is applied to the LET value analysis of heavy ions after multi-layer shielding, there are 2 shortcomings: (1) Up to 8 layers of shielding materials can be set [2] , the highest number of metal wiring layers under the conditions of modern device technology has reached 13 layers in 2013 [3][4] , the number of oxide layers is close to that of the wiring layer, so the total number of shielding layers is more than 26 layers, and the adaptability of the software is not good in this case; (2) only the remaining energy of heavy ions can be given [5] , the LET value corresponding to the remaining energy cannot be directly given, and it is inconvenient for people who are not majors in particle physics to apply

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