Electric power electronic semiconductor chip terminal structure

Abstract

The invention relates to the electric power electronic technology field of semiconductor devices and particularly relates to an electric power electronic semiconductor chip terminal structure. The electric power electronic semiconductor chip terminal structure comprises a terminal unit structure of multiple electric power electronic semiconductor chips which are transversely and parallely arranged, wherein the terminal unit structure of the multiple electric power electronic semiconductor chips comprises a first conduction type substrate, a second conduction type field limit ring is arranged in a first main face of the first conduction type substrate, a first main plane of the first conduction type substrate is provided with a first insulation layer, two sides of the second conduction type field limit ring are respectively provided with a field board, and the field boards are further on the first insulation layer. According to the electric power electronic semiconductor chip terminal structure, the terminal unit structure is novel in design, no similar structure exists in the prior art, the manufacturing technology is simple, the electric power electronic semiconductor chip terminal structure is characterized in that structures of the field boards are improved, the field boards and the second conduction type field limit ring are connected, the stop field board can compress the electric field, the extension field board can extend the electric field, and thereby re-distribution of the electric field is realized, and the field limit ring electric field effect is further realized.

Description

technical field [0001] The invention relates to a semiconductor device in the technical field of power electronics, in particular to a terminal structure of a power electronics semiconductor chip. Background technique [0002] In the design and manufacture of power electronic devices, the terminal is an indispensable part. It can smooth the internal depletion region of the device when the device is subjected to high voltage, so that the device can withstand higher voltage. The terminal of traditional power electronic devices is usually prepared by implanting and advancing the field confinement ring on the low-doped bottom; there are also field plates on the outside of the field confinement ring to achieve further smoothing of the electric field. [0003] Compared with the single field limit ring structure, the field limit ring + field plate structure can better smooth the depletion region, so in the same pressure-bearing terminal design, the field limit ring + field plate de...

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Problems solved by technology

[0009] Among them, CN201010246809.4 and CN201010246816.4 are the same as the objects protected by this patent, both of which are a kind of "terminal structure" of the semiconductor device itself, but they are different in the design of the terminal structure and the function of the terminal structure. Both patents reduce the electric field at the field limiting ring through different design of the field limiting ring, so that the breakdown voltage can be increased. Their field plate and the field limiting ring are not connected, and the field plate does not reduce the The role of small electric fields

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