Metallic particle paste, cured product using same and semiconductor device

Abstract

A metallic particle paste (10) includes a polar solvent (4) and particles (10) dispersed in the polar solvent and containing a first metal. A second metal different from the first metal is dissolved in the polar solvent. The second metal is present in solvent (10) of the metallic particle paste (10) in the form of a complex ion, an organometallic ion or an ion of a metal salt. The paste (10) may be used for forming wiring and a heat-radiation portion of an electronic substrate or for bonding members (5, 7) in a semiconductor device through a bonding layer (6).

Description

[0001] This application claims priority based on Japanese Patent Application No. 2013-187709 filed on September 10, 2013, the entire contents of which are incorporated herein by reference. technical field [0002] The embodiments described here generally relate to a metal particle paste, a cured product using the same, and a semiconductor device. Background technique [0003] Solder is used in electronic equipment as a material for bonding electronic parts and substrates, and has been becoming lead-free. However, in the case of solder applied to junctions of power devices that reach high temperatures during use, it is difficult to make lead-free. In recent years, wide bandgap semiconductors capable of operating at higher temperatures than Si have been developed, and the operating temperature of devices is predicted to reach about 300°C. Therefore, higher heat resistance is required for the joining material. [0004] At present, it is desired to improve the heat resistance ...

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Problems solved by technology

[0007] However, since fine particles are usually aggregated to form secondary particles, it is very difficult to obtain a metal particle paste in which fine particles made of the first metal and fine particles made of the second metal are uniformly mixed

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