Electrical insulating epoxy resin composition and preparation method thereof
An epoxy resin and electrical insulation technology, applied in the field of materials, can solve the problems of reducing the electrical properties such as the breakdown strength of the epoxy resin, losing the mechanical properties of the epoxy resin system, affecting the casting process, etc., achieving excellent comprehensive performance and improving electrical properties. performance, the effect of improving the filling rate
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Embodiment 1-5
[0060] According to Table 1, the components of the formula amount were mixed evenly at 135°C by the high-speed disperser DISPERMAT of VMA-Getzmann Company to form an epoxy pouring formula. After vacuum degassing, it was poured into a preheated mold. The curing conditions were: Cured at 115°C for 15h, then at 140°C for 12h. Curing and molding to obtain electrical insulating epoxy resin composition examples 1-5.
[0061] The micron α-Al that adopts in the embodiment 1-5 of the present invention 2 o 3 , nano-SiO 2 The hollow spheres are all surface-treated, and the surface treatment agent is γ-glycidoxypropyltrimethoxysilane.
[0062] The nanometer SiO that adopts in the embodiment of the present invention 1-5 2 The hollow sphere is hollow with an inner diameter of 100 nm and an outer wall thickness of 10 nm.
[0063] Nano-SiO in Example 1-5 of the present invention 2 The bulk density of hollow spheres is 65Kg / m 3 .
[0064] The formulations and properties of the electric...
Embodiment 6-8
[0081] According to Table 5, the components of the formula amount were mixed evenly at 120°C by the high-speed disperser DISPERMAT of VMA-Getzmann Company to form an epoxy pouring formula. After vacuum degassing, it was poured into a preheated mold. The curing conditions were: Curing at 105°C for 20 hours, and curing at 150°C for 16 hours. Curing and molding to obtain electrical insulation epoxy resin composition examples 6-8.
[0082] The micron α-Al that adopts in the embodiment 6-8 of the present invention 2 o 3 , Quartz Silica, Nano SiO 2 The hollow spheres are all surface-treated, and the surface treatment agent is γ-glycidoxypropyltrimethoxysilane.
[0083] The nanometer SiO that adopts in the embodiment of the present invention 6 2 The hollow inner diameter of the hollow ball is 50nm, the outer wall thickness is 10nm, and the bulk density is 114Kg / m 3 It is 80nm that hollow inner diameter among the embodiment 7, and outer wall thickness is 15nm, and packing density...
Embodiment 9-14
[0092] According to Table 7, the components of the formula amount were mixed evenly at 150°C by the high-speed disperser DISPERMAT of VMA-Getzmann Company to form an epoxy pouring formula. After vacuum degassing, it was poured into a preheated mold. The curing conditions were: Cured at 125°C for 8h, then at 150°C for 6h. Curing and molding to obtain electrical insulating epoxy resin composition examples 9-14.
[0093] Micron α-Al adopted in the embodiment of the present invention 9-14 2 o 3 , Quartz Silica, Nano SiO 2 The hollow spheres are all surface-treated, and the surface treatment agent is γ-glycidoxypropyltrimethoxysilane.
[0094] The nanometer SiO that adopts in the embodiment of the present invention 9-14 2 The hollow sphere is hollow with an inner diameter of 90nm and an outer wall thickness of 10nm.
[0095] Bulk density in the embodiment of the present invention 9-14 is 82Kg / m 3 .
[0096] The formulations and properties of the electrical insulating epoxy r...
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