A resistive variable memory using a metamaterial electrode structure and its preparation method
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A technology of resistive variable memory and electrode structure, applied in the direction of electrical components, etc., can solve the problems that cannot fully meet the requirements of the development of non-volatile memory, and achieve the effect of enriching applications
Active Publication Date: 2018-11-27
PEKING UNIV
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[0002] In recent years, with the further development of integrated circuits, the requirements for the size reduction, power consumption reduction and high integration of non-volatile memory have been continuously improved. Requirements for the development of volatile memory
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Embodiment 1
[0029] Embodiment 1 (SRR and derived structures are used as metamaterial electrodes as examples):
[0030] 1) A layer of resistive thin film material is grown on the Si substrate, such as figure 2 Shown:
[0031] 1.1) Prepare a layer of resistive thin film material by CVD reactive sputtering method:
[0032] Specific materials can be TaOx, HfOx, Al2O3, SiOx, TiOx, etc., with a thickness between 20nm and 50nm; image 3 shown.
[0033] 1.2) ALD (Atomic layer deposition) method is used to deposit thinner resistive film materials: specific materials can be TaOx, HfOx, Al2O3, etc., with a thickness between 5-10nm.
[0034] The above provides two different methods for preparing resistive thin film materials, ie, sputtering and ALD methods, both of which have their own advantages. The performance of the resistive thin film material prepared by ALD deposition method will be better, and it is more suitable for depositing thinner films. The ALD deposition method is equivalent to th...
Embodiment 2
[0040] Embodiment 2 (SRR and derived structures are used as metamaterial electrodes as examples):
[0041] 1) A layer of resistive thin film material is grown on the Si substrate, such as figure 2 Shown:
[0042] This step is the same as step 1) in Example 1, and will not be described in detail.
[0043] 2) Coating a layer of photoresist on the resistive thin film layer, such as Figure 5 shown.
[0044] 3) Forming an electrode pattern on the photoresist on the resistive film material by photolithography of a mask.
[0045] In this embodiment, the electrode pattern structure is an SRR structure, and the pattern formed in this step includes the SRR structure pattern and the macroscopic pattern of the electrode.
[0046] 4) Etch the resistive thin film layer to a thickness of 5nm-50nm by using the AME etching technology of the semiconductor CMOS process, such as Image 6 shown. The resistive material layer is etched to expose the substrate.
[0047] 5) Metal metamaterial e...
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Abstract
The invention discloses a resistive random access memory (RRAM) with a metamaterial electrode structure and a preparation method of the RRAM. The resistive random access memory comprises a substrate and an electrode-resistive layer-electrode structure arranged on the substrate, wherein the electrode is of a metamaterial structure capable of producing resonance to an electromagnetic field. The method comprises the steps that firstly, a resistive thin-film material layer is grown with a traditional semiconductor CMOS process on the substrate; then, a photoresist is taken as a sacrificial layer, and an electrode pattern with the metamaterial structure is etched on the resistive thin-film material layer with a photolithography of the traditional thin-film material CMOS process via the sacrificial layer; a metal electrode material is deposited on the etched pattern, and the structure of the resistive random access memory is formed after the sacrificial layer is removed. According to the method, the metamaterial is made into the electrode structure and applied to the resistive random access memory, and the change of a storage state is realized through non-contact excitation of an electromagnetic wave, so that the resistive random access memory can be applied to aspects of an electromagnetic switch, electromagnetic wave detection and the like, thus, greatly enriching the application of the resistive random access memory.
Description
technical field [0001] The invention belongs to the technical field of metamaterial and CMOS hybrid integrated circuits, and in particular relates to a device structure that uses a metamaterial electrode structure to change the storage state of a resistive random access memory through electromagnetic wave (electromagnetic wave) excitation and its preparation method. Background technique [0002] In recent years, with the further development of integrated circuits, the requirements for the size reduction, power consumption reduction and high integration of non-volatile memory have been continuously improved. requirements for the development of volatile memory. [0003] Resistive memory has received extensive attention in the field of integrated circuits, and its advantages in high integration and low power consumption make it a strong competitor in the new generation of memory. The basic principle of RRAM is that the resistance embodied in the memory structure can achieve r...
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