Perovskite type material preparation method and equipment and machining method of photovoltaic device made from perovskite type material

Abstract

The invention relates to a perovskite type material preparation method and equipment, and a machining method of a photovoltaic device made from a perovskite type material. The invention provides the method for preparing the perovskite type material by a gaseous phase-solid phase reaction and a method for preparing a matrix deposited with a precursor BX2 film by adopting a vapor deposition method, and provides special equipment for the methods. The perovskite type material preparation method can be used for machining a photovoltaic element, and the obtained photovoltaic element has excellent photoelectric property.

Description

technical field [0001] The invention relates to processing, preparation methods and equipment for photovoltaic devices and materials thereof, in particular to a preparation method and equipment for perovskite materials, and a photovoltaic device processing method based on the material preparation method. Background technique [0002] As the primary green energy, solar energy utilization based on photovoltaic technology has attracted extensive attention from industry and academia, and more and more countries are committed to the development of new photovoltaic technologies. Excellent photovoltaic technology needs to have three principles: (1) high photoelectric conversion efficiency of photovoltaic devices, (2) low cost of photovoltaic material preparation and device processing, and (3) stable photoelectric performance of photovoltaic devices. [0003] In recent years, photovoltaic technology based on organic-inorganic hybrid perovskite materials (hereinafter referred to as "...

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Problems solved by technology

[0008] Although researchers have made some progress in the preparation of perovskite materials, the existing liquid-phase and gas-phase methods have their shortcomings.

The disadvantage of the liquid phase method is that the spin coating process is difficult to control, which makes the performance of the grown perovskite material vary greatly; the amount of preparation materials is large, and the cost of large-scale preparation is high

However, the gas phase method has defects such as complex equipment, difficult control of process parameters, or growth of perovskite materials without vacuum, which makes it difficult to control material properties.

The deficiencies of the above methods make it difficult for these methods to be used in large-scale production, and the area of ​​the prepared perovskite film is relatively small (centimeter level)

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