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A High Speed ​​Sensitive Amplifier for Flash Memory

A sensitive amplifier and high-speed technology, applied in the field of sensitive amplifiers, can solve the problems of long discharge time and limited readout speed, and achieve the effect of improving response speed and readout speed

Active Publication Date: 2017-12-22
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Since the time to read "0" is not affected by the charging and discharging of the pre-charge voltage, the time to read "1" is equal to the response time of the readout circuit. The control strategy adopted during pre-charging in the prior art is too simple. The voltage is too high, so the discharge time is too long, which limits the readout speed

Method used

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  • A High Speed ​​Sensitive Amplifier for Flash Memory
  • A High Speed ​​Sensitive Amplifier for Flash Memory
  • A High Speed ​​Sensitive Amplifier for Flash Memory

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Embodiment Construction

[0023] The implementation of the present invention is described below through specific examples and in conjunction with the accompanying drawings, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific examples, and various modifications and changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0024] Figure 4 It is a schematic circuit diagram of a high-speed sensitive amplifier applied to flash memory in the present invention. Such as Figure 4 As shown, the present invention is a high-speed sensitive amplifier applied to flash memory, including reference unit constant current source Irefcell, mirror image constant current source circuit 401, readout switch circuit 402, storage...

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Abstract

The invention discloses a high-speed sensitive amplifier applied to flash memory, which includes a reference unit constant current source, a mirror constant current source circuit, a readout switch circuit, a storage unit and its equivalent bit line capacitance, and a comparison buffer circuit. The drain of the second PMOS transistor of the source circuit is connected to the drain of the first NMOS transistor of the readout switch circuit to form an output node, and the sensitive amplifier also includes a pre-charging circuit connected to the output node for outputting The voltage of the node is accurately charged to a setting value ΔV higher than the reference voltage Vref_e of the comparator of the comparison buffer circuit. The invention can improve the response speed of the sensitive amplifier, thereby increasing the readout speed of the flash memory.

Description

technical field [0001] The invention relates to a sensitive amplifier, in particular to a high-speed sensitive amplifier used in flash memory. Background technique [0002] Storage technology is widely used in modern communication products, and sensitive amplifiers (also known as sense amplifiers) are a key component of storage circuits. figure 1 It is a general simplified schematic diagram of a traditional sensitive amplifier used for flash memory in the prior art, which generally includes a reference unit constant current source Irefcell, a mirror constant current source circuit (composed of PMOS transistors PM1 and PM2), a readout switch circuit (composed of NMOS transistors NM1 and inverter INV1), storage unit cell and its equivalent bit line capacitance Cbl, precharge circuit (composed of PMOS transistor PM3), comparison buffer circuit (composed of comparator CMP and buffer BUF1, BUF2). Among them, the sources of the PMOS transistors PM1, PM2 and PM3 are connected to t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/26G11C16/06
Inventor 黄明永杨光军
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP