Method for controlling consistency of critical dimensions after ultra-deep hole plasma etching process

Abstract

The invention provides a method for controlling the consistency of critical dimensions after an ultra-deep hole plasma etching process. The method for controlling the consistency of the critical dimensions after the ultra-deep hole plasma etching process comprises the following steps: introducing mixed gas into a reaction chamber after the ultra-deep hole plasma etching process, wherein the mixed gas comprises nitrogen, hydrogen and fluorine-containing gas; performing a plasma process on the reaction chamber into which the mixed gas is introduced. A metal copper layer which is accumulated on the wall of the reaction chamber is removed by introducing the mixed gas into the reaction chamber after the ultra-deep hole plasma etching process and performing the plasma process on the reaction chamber into which the mixed gas is introduced, wherein the mixed gas comprises the nitrogen, the hydrogen and the fluorine-containing gas. Therefore, the problem of etching rate drift of an oxide layer after the ultra-deep hole plasma etching process is avoided / lightened; the consistency of the critical dimensions of the ultra-deep hole plasma etching mass production process and the consistency of the formed integrated circuit devices are improved.

Description

technical field [0001] The invention relates to the technical field of integrated circuit manufacturing equipment, in particular to a method for controlling the consistency of critical dimensions after an ultra-deep hole plasma etching process. Background technique [0002] As the size of integrated circuits in the semiconductor industry continues to shrink, for the plasma etching process of integrated circuit manufacturing, the stability of etching between wafers has become a major consideration. The reaction by-products deposited in the reaction chamber of the plasma etching equipment will be very important to the drift of the process (such as: etching rate, etching morphology, etching selectivity and etching uniformity, etc.) a factor of influence. Specifically, with the etching of the wafer, some reaction by-products will be deposited on the wall of the reaction chamber of the plasma etching equipment. During the subsequent etching process, the deposited reaction by-pr...

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Problems solved by technology

[0004] The purpose of the present invention is to provide a method for controlling the consistency of key dimensions after the ultra-deep hole plasma etching process, so as to solve the oxide layer etching rate drift after the ultra-deep hole (UTV) plasma etching process in the prior art The problem

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