Transistor small signal equivalent circuit model

An equivalent circuit model, small-signal technology, applied in electrical digital data processing, special data processing applications, instruments, etc., can solve the problem that high-order parasitic effects are not considered, and the small-signal equivalent circuit model of transistors cannot accurately characterize parasitic effects and other problems to achieve the effect of high-precision performance

Active Publication Date: 2015-04-29
SOUTHEAST UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But at high frequencies, when the current flows in each electrode, in addition to the first-order parasitic effects that have been considered in the traditional model, the accompanying higher-order parasitic effects have not been considered
The skin effect of the current in the wire at high

Method used

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  • Transistor small signal equivalent circuit model
  • Transistor small signal equivalent circuit model
  • Transistor small signal equivalent circuit model

Examples

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Embodiment 1

[0033] Embodiment 1: as figure 1 As shown, the small-signal equivalent circuit model of a field effect transistor includes a parasitic part 100 (outside the dotted line) and an intrinsic part 200 (inside the dotted line). The intrinsic part includes the gate-source intrinsic unit 210 located between the gate internal node G` and the source internal node S`, and the gate-drain cell 210 located between the gate internal node G` and the drain internal node D` The intrinsic cell 220 is located at the drain-source intrinsic cell 230 between the inner source node S′ and the inner drain node D′.

[0034] The source external node S is connected outside the source internal node S′, the drain external node D is connected outside the drain internal node D′, and the gate external node G is connected outside the gate internal node G′.

[0035] The parasitic part includes a source parasitic unit 130 located between the source inner node S′ and the source outer node S, a source parasitic un...

Embodiment 2

[0057] Embodiment 2: as figure 2 As shown, the small-signal equivalent circuit model of a bipolar transistor includes a parasitic part 300 , an external resistance part 400 and an intrinsic part 500 . The equivalent circuit model has base parasitic node B, base external resistance node B`, base junction outer node B`` and base junction inner node B``` in series; emitter parasitic node in series E. Emitter external resistor node E`, emitter node E``; collector parasitic node C, collector external resistor node C`, collector node C`` connected in series.

[0058] Wherein the intrinsic part 500 includes the base internal resistance 510 connected between the base junction inner node B``` and the base junction outer node B``; the base junction inner node B``` is connected to the collector junction Base-collector inter-electrode intrinsic unit 540 between nodes C``; base-collector extra-junction capacitance 520 connected between base-external node B`` and collector node C``; The ...

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Abstract

The invention discloses a transistor small signal equivalent circuit model, which comprises an electrode parasitic part at each electrode part, wherein each electrode parasitic part comprises a step inductive resistance structure; each step inductive resistance structure comprises a parasitic inductor and a parasitic resistor which are mutually connected in series; the high-order parasitic resistor is mutually connected with the high-order parasitic inductor in series, and then is connected with the parasitic resistor in parallel. The module better reflects the high-order parasitic effect relating to semiconductor active devices at high frequency, therefore, the performance of a transistor can be simulated more accurately, and the transistor small signal equivalent circuit model can be used for circuit design, or guiding device preparation and process improvement.

Description

technical field [0001] The invention relates to a small-signal equivalent circuit model of a transistor, which belongs to the field of integrated circuits. Background technique [0002] Transistor models mainly include two types, physical models and equivalent circuit models. Among them, field effect transistors include metal-oxide-semiconductor transistors (MOSFETs), metal-semiconductor transistors (MESFETs), high electron mobility transistors (HEMTs), and pseudo high electron mobility transistors (PHEMTs). Bipolar transistors include homojunction bipolar transistors (BJTs) and heterojunction bipolar transistors (HBTs). [0003] The equivalent circuit model is a general and effective model for simulating transistors. Establishing an accurate equivalent circuit model is the key to the success of circuit design. The core factor to reduce the cost of development and production. [0004] The structure of the transistor small-signal equivalent circuit model and the extraction...

Claims

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Application Information

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IPC IPC(8): G06F17/50
Inventor 黄风义唐旭升张有明彭振宁张雪刚
Owner SOUTHEAST UNIV
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