Transistor small signal equivalent circuit model

Abstract

The invention discloses a transistor small signal equivalent circuit model, which comprises an electrode parasitic part at each electrode part, wherein each electrode parasitic part comprises a step inductive resistance structure; each step inductive resistance structure comprises a parasitic inductor and a parasitic resistor which are mutually connected in series; the high-order parasitic resistor is mutually connected with the high-order parasitic inductor in series, and then is connected with the parasitic resistor in parallel. The module better reflects the high-order parasitic effect relating to semiconductor active devices at high frequency, therefore, the performance of a transistor can be simulated more accurately, and the transistor small signal equivalent circuit model can be used for circuit design, or guiding device preparation and process improvement.

Description

technical field [0001] The invention relates to a small-signal equivalent circuit model of a transistor, which belongs to the field of integrated circuits. Background technique [0002] Transistor models mainly include two types, physical models and equivalent circuit models. Among them, field effect transistors include metal-oxide-semiconductor transistors (MOSFETs), metal-semiconductor transistors (MESFETs), high electron mobility transistors (HEMTs), and pseudo high electron mobility transistors (PHEMTs). Bipolar transistors include homojunction bipolar transistors (BJTs) and heterojunction bipolar transistors (HBTs). [0003] The equivalent circuit model is a general and effective model for simulating transistors. Establishing an accurate equivalent circuit model is the key to the success of circuit design. The core factor to reduce the cost of development and production. [0004] The structure of the transistor small-signal equivalent circuit model and the extraction...

AI Technical Summary

Problems solved by technology

But at high frequencies, when the current flows in each electrode, in addition to the first-order parasitic effects that have been considered in the traditional model, the accompanying higher-order parasitic effects have not been considered

The skin effect of the current in the wire at high frequency will cause the resistance and inductance of the wire to produce a ladder structure. If this ladder structure is not taken into account, then the corresponding small-signal equivalent circuit model of the transistor will be This parasitic effect cannot be accurately characterized

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