Elementary cell automation machine coupling method for thin film boundary and deposition rate calculation

A cellular automaton and deposition rate technology, applied in chemical instruments and methods, membrane technology, electrical components, etc., can solve the problem of reducing the simulation speed, affecting the simulation accuracy, unable to meet the simulation accuracy and speed requirements of MEMS and IC processes, etc. problem, to achieve fast simulation speed, high precision effect

Inactive Publication Date: 2005-11-23
SOUTHEAST UNIV
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Problems solved by technology

However, the current boundary cellular automata method uses different calculation methods for thin film boundary calculation and deposition rate calculation. In the boundary calculation and deposition rate calculation, it is necessary to realize the coupling between different algorithms, which will reduce the simulation speed. and affect the simulation accuracy
Therefore, these models that use different methods for thin film boundary calculation and deposition rate calculation can no longer meet the increasing simulation accuracy and speed requirements of MEMS and IC process simulation.

Method used

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  • Elementary cell automation machine coupling method for thin film boundary and deposition rate calculation
  • Elementary cell automation machine coupling method for thin film boundary and deposition rate calculation
  • Elementary cell automation machine coupling method for thin film boundary and deposition rate calculation

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Embodiment Construction

[0023] In the present invention, the cellular automaton adopts the two-dimensional Moore neighborhood, and utilizes the corresponding two-dimensional matrix to simulate the deposition process. Subdivide the substrate into an array of small squares with a side length a, and each square serves as a cell of CA. At a certain time t, the state C of the cell i，j (t) is defined as the area A of the deposited material in the cell at this time in (t) and the whole cell area A t The ratio of:

[0024] C i , j ( t ) = A in ( t ) A t - - - ( 1 )

[0025] In the film deposition simulation ...

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Abstract

This invention relates to film boundary and deposition speed computation cell automatic couple method, which comprises the following steps: a, adopting cell automatic method to compute the deposition rate and to simplify the rate into one series of line cells materials testing; b, in the deposition process, adopting automatic method to compute the film boundary to realize the total coupling between rate and method. The method satisfying the above two conditions to analogue the film boundary.

Description

technical field [0001] The invention provides a cell automata coupling method for film boundary and deposition rate calculation used in film deposition process simulation, and belongs to the technical field of microelectronic film deposition process simulation. Background technique [0002] In the processing of microelectromechanical systems (MEMS) and integrated circuits (IC), thin film deposition technology has a wide range of applications and has an important impact on the performance of devices. The development of suitable process simulation software to quickly and accurately simulate the film deposition process is of great significance for improving the design and manufacturing technology level of MEMS, shortening the design cycle of MEMS products, and reducing product development costs. [0003] At present, two mathematical equation methods for boundary calculation in the film deposition simulation process, the characteristic trajectory equation method (Characteristic ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B81C99/00H01L21/00
Inventor 黄庆安周再发李伟华徐大为
Owner SOUTHEAST UNIV
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