I-V (Current-voltage) model parameter extraction method based on gallium nitride high electronic mobility crystal valve

Abstract

The invention discloses an I-V (Current-voltage) model parameter extraction method based on a gallium nitride high electronic mobility crystal valve. The method comprises the following steps of according to the physical meaning of the parameters of an I-V model, blocking the model parameters, decreasing the complicated degree of the I-V model, fitting transfer characteristic curves of actually-measuring pulse I-V and static I-V, extracting the model parameters of the corresponding block. Compared with the traditional parameter extraction method, the method disclosed by the invention has the advantages that the parameter extraction of the I-V model can be quickly and accurately completed, and the modeling efficiency of devices is greatly improved.

Description

technical field

[0001] The invention belongs to the field of power devices, in particular to an I-V model parameter extraction method based on gallium nitride high electron mobility transistor (GaN HEMT). Background technique

[0002] Gallium Nitride High Electron Mobility Transistor (GaN HEMT) is more and more widely used in microwave circuits due to its high frequency and high power characteristics. Because GaN HEMTs need to work under high temperature and high power conditions, large signal models are the basis for microwave circuit design using GaN HEMTs.

[0003] The current-voltage model, that is, the I-V model, is the core of the large-signal model. In order to characterize the self-heating effect and trap effect of GaN HEMT when it works under high-power conditions, the I-V model of GaN HEMT has more features than the I-V model of Si, GaAs and other devices. Model parameters, model parameters usually range from tens to more than one hundred.

[0004] The parameter ...

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