I-V (Current-voltage) model parameter extraction method based on gallium nitride high electronic mobility crystal valve

Abstract

The invention discloses an I-V (Current-voltage) model parameter extraction method based on a gallium nitride high electronic mobility crystal valve. The method comprises the following steps of according to the physical meaning of the parameters of an I-V model, blocking the model parameters, decreasing the complicated degree of the I-V model, fitting transfer characteristic curves of actually-measuring pulse I-V and static I-V, extracting the model parameters of the corresponding block. Compared with the traditional parameter extraction method, the method disclosed by the invention has the advantages that the parameter extraction of the I-V model can be quickly and accurately completed, and the modeling efficiency of devices is greatly improved.

Description

technical field [0001] The invention belongs to the field of power devices, in particular to an I-V model parameter extraction method based on gallium nitride high electron mobility transistor (GaN HEMT). Background technique [0002] Gallium Nitride High Electron Mobility Transistor (GaN HEMT) is more and more widely used in microwave circuits due to its high frequency and high power characteristics. Because GaN HEMTs need to work under high temperature and high power conditions, large signal models are the basis for microwave circuit design using GaN HEMTs. [0003] The current-voltage model, that is, the I-V model, is the core of the large-signal model. In order to characterize the self-heating effect and trap effect of GaN HEMT when it works under high-power conditions, the I-V model of GaN HEMT has more features than the I-V model of Si, GaAs and other devices. Model parameters, model parameters usually range from tens to more than one hundred. [0004] The parameter ...

AI Technical Summary

Problems solved by technology

The method proposed in this document requires expensive test equipment (such as a large-signal network analyzer) and is difficult to implement (G.Avolio, A.Raffo, I.Angelov, G.Crupi, G.Vannini, and D.Schreurs, " A Novel Technique for the Extraction of Nonlinear Model for Microwave Transistors Under Dynamic-bias Operation”, IEEE MTT-S International Microwave Symposium, pp.1-3, June 2013)

[0006] I. Angelov et al. from Chalmers University proposed in 2013 to extract some parameters with physical meaning through the slope of the DC I-V curve in a specific area, and then extract the remaining parameters through numerical optimization and fitting of low-frequency time-domain waveforms. However, the literature used The form of the I-V model is relatively simple, and it is difficult to apply when the number of parameters increases greatly (I.Angelov et al, "Hybrid Measurement-based Extraction of Consistent Large-Signal Models for Microwave FETs", European Microwave Conference, pp.267-270, 2013)

[0007] Kelvin S.Yuk et al. of the University of California proposed an improved I-V model based on the work of Angelov et al. in 2009. This model can accurately reflect the trap effect and self-heating effect of GaN devices, but the paper does not give Specific and complete I-V model parameter extraction method (KS Yuk, GR Branner, DJ McQuate. "A Wideband Multiharmonic Empirical Large-Signal Model for High-Power GaN HEMTs With Self-Heating and Charge-Trapping Effects", IEEE Trans. Microwave Theory Tech, 2009, vol.57, no.12, pp.3322-3332, 2009.)

Images