Self-Aligned Contact Hole Etching Method
A self-aligned contact hole and gate contact technology, which is applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems that the contact hole is not easy to be fully opened, the process difficulty is increased, and the trench structure is not easily filled. Achieve the effect of reducing the difficulty of PSG filling, enhancing the etching ability and improving the etching quality
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[0030] Such as figure 2 Shown is the flow chart of the method of the embodiment of the present invention; Figure 3A to Figure 3G Shown is a cross-sectional view of the self-aligned contact hole structure in each step of the method of the embodiment of the present invention. The method for etching a self-aligned contact hole in the embodiment of the present invention includes the following steps:
[0031] Step 1, such as Figure 3AAs shown, a silicon substrate 1 formed with a plurality of gate structures is provided, and the gate structure includes a gate dielectric layer 2, a gate polysilicon 3 and a hard mask layer 4 sequentially formed on the surface of the silicon substrate 1 , the pattern of the gate structure is defined by the hard mask layer 4, that is, the pattern of the gate structure is defined by the hard mask layer 4 and all operations are performed under the protection of the hard mask layer 4 etching of the gate polysilicon 3; self-aligned lightly doped drain...
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