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KOH developing liquid for KMPR photoresist

A technology of developing solution and photoresist, which is applied in the field of KOH developing solution, can solve problems such as long time required for developing KMPR, development effect is not as good as its organic solvent developing solution, and influence of KMPR glue industrialized use, etc., so as to improve quality and stability , delayed adjustment effect

Inactive Publication Date: 2015-05-06
SHENZHEN GUOHUA OPTOELECTRONICS +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the developer of KMPR glue recommended by MicroChem is an organic solvent (such as PGMEA) or 2.38 wt% TMAH solution. The organic solvent developer is not suitable for industrial production due to environmental protection issues, and the TMAH solution takes a long time to develop KMPR. The development effect is far inferior to its organic solvent developer, so the industrial use of KMPR glue is affected

Method used

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  • KOH developing liquid for KMPR photoresist
  • KOH developing liquid for KMPR photoresist
  • KOH developing liquid for KMPR photoresist

Examples

Experimental program
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Effect test

Embodiment 1

[0027] Example 1: Weigh a certain amount of KOH, dissolve it in 100mL deionized water, and shake it evenly to obtain a developer solution with a concentration of 0.1wt%. Add the obtained developer solution to the developing pool, and develop a 3-inch solution at 24°C. Substrate (side length 7.6cm), the height of the pixel wall formed by the photoresist KMPR on the substrate is 6-7μm, and the development method: shaking development.

Embodiment 2

[0028] Embodiment 2: develop under the condition of 35° C., and other conditions are the same as embodiment 1.

Embodiment 3

[0029] Example 3: Weigh a certain amount of KOH, dissolve it in 100mL of deionized water, and shake it evenly to obtain a developer solution with a concentration of 0.4wt%. The developer solution is added to the developing pool, and developed at 24°C for 3 inches Substrate (side length 7.6cm), the height of the pixel wall formed by the photoresist KMPR on the substrate is 6-7μm, and the development method: shaking development.

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Abstract

The invention discloses a KOH developing liquid for an KMPR photoresist. The developing liquid comprises a property amount of KOH and deionized water, further, K2HPO4 is added into the KOH developing liquid to prepare a buffer solution, a hydration reaction of substances in the buffer solution can be promoted along with the gradual neutralization of base groups in the developing liquid so as to further release base groups, the reduction speed of developing effect of the developing liquid can be reduced, the controlled-release effect of the base groups can be achieved, so that the adjustment on the developing time during production can be postponed, and the quality and stability of the product can be enhanced. Furthermore, in order to achieve a better developing effect, a surfactant, a defoaming agent and the like can also be added in the developing liquid. According to the KOH developing liquid for the KMPR photoresist, the KMPR photoresist can be better developed, without causing environment pollution like an organic solution.

Description

technical field [0001] The invention relates to a developing solution for photoresist, in particular to a KOH developing solution capable of developing KMPR glue. Background technique [0002] In the fabrication of the front plate of the electrowetting display, the pixel wall surrounds the smallest display unit, which is an important part of the display, and the fabrication of the pixel wall is usually obtained by photoresist through photolithography. The so-called photoresist is a kind of photosensitive resin composition, which is divided into two types: positive and negative. The exposed area is developed but the unexposed area cannot be developed. It is a positive photoresist, and vice versa. Photoresist. Taking the negative photoresist as an example, the photoresist is first coated on the substrate, the photoresist is pre-baked, and then the photoresist is exposed to light using a mask, and then washed away with a developer. The photoresist in the unexposed area covere...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/32
CPCG03F7/32
Inventor 周国富李发宏窦盈莹水玲玲罗伯特·安德鲁·海耶斯
Owner SHENZHEN GUOHUA OPTOELECTRONICS
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