A gallium arsenide laser with low electron leakage and its fabrication method

Abstract

The invention discloses a gallium arsenide laser with low electron leakage and a manufacturing method thereof. The electron energy is reduced by introducing a thicker narrow band gap insertion layer between the n-type waveguide layer and the active region. The reduction of electron energy not only improves the carrier efficiency of the quantum well, but also improves the temperature characteristics of the quantum well, thereby reducing electron leakage. The present invention uses quaternary materials as the insertion layer, and by selecting appropriate material components, not only the bandgap width of the insertion layer is reduced, but also the refractive index of the insertion layer can be kept consistent with the refractive index of the n-type waveguide layer, avoiding the introduction of the insertion layer Influence on the light field distribution. Therefore, by introducing a thicker narrow-bandgap insertion layer between the n-type waveguide layer and the active region, the performance of GaAs-based lasers such as threshold current and electro-optical conversion efficiency is greatly improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor optoelectronic devices, in particular to a gallium arsenide laser with low electron leakage and a manufacturing method thereof. Background technique [0002] With the rapid development of semiconductor optoelectronic devices, high-power semiconductor lasers came into being. Due to the advantages of small size, low price, high electro-optical conversion efficiency and long life of semiconductor lasers, semiconductor lasers have a very wide range of applications in the field of optoelectronics. Semiconductor lasers play an important role in the fields of industrial processing, medical treatment, military and theoretical research. Gallium arsenide is the most well-studied material so far compared to other semiconductor III-V materials. Therefore, people have the highest performance requirements for gallium arsenide lasers. This is reflected in the fact that gallium arsenide lasers can have ve...

AI Technical Summary

Problems solved by technology

If the temperature of the active region is too high, the electrons in the well will escape again, causing electron leakage

In addition, if the temperature of the active region is too high, the Auger recombination will be more serious, and the Auger recombination will generate hot carriers and cause electron leakage.

Second, the quantum well trapping efficiency is reduced

Eventually, the capture efficiency of the quantum well will decrease, which will also make more electrons not captured by the quantum well and directly cross the quantum well to the p-region, resulting in electron leakage

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