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Method for establishing OPC model and optical proximity correction method for user target graphs

A technology of models and graphics, which is applied in the direction of optics, photographic process of patterned surface, and originals for photomechanical processing, etc., can solve the problems of graphics quality to be improved, and shorten the time of optical proximity calibration and manufacturing time, quality High and yield-enhancing effects

Active Publication Date: 2015-05-13
SEMICON MFG INT (SHANGHAI) CORP
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Problems solved by technology

[0004] However, in the actual manufacturing process, the graphics quality manufactured by using the existing OPC model still needs to be improved

Method used

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  • Method for establishing OPC model and optical proximity correction method for user target graphs
  • Method for establishing OPC model and optical proximity correction method for user target graphs
  • Method for establishing OPC model and optical proximity correction method for user target graphs

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Embodiment Construction

[0024] As mentioned in the background art, the quality of graphics produced by using the OPC model in the prior art needs to be improved.

[0025] After research, it is found that with the further reduction of the process size, the minimum line width of the target pattern is also gradually reduced. Generally, the minimum line width is closely related to the numerical aperture (Numerical Aperture, NA) size in the optical lens system. The larger the numerical aperture in the optical lens system, the smaller the minimum line width of the actual pattern formed. However, the numerical aperture in the optical lens system is also related to the actual process window (Process Window). The larger the numerical aperture in the optical lens system, the actual process window will be reduced. The small process window makes the lithography process conditions drop, which ultimately affects the yield of the actual graphics formed. In the prior art, when establishing the OPC model, the influe...

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Abstract

The invention relates to a method for establishing an OPC model and an optical proximity correction method for user target graphs, wherein the method for establishing the OPC model comprises the following steps: providing a test graph having several sprite graphics and an initial OPC model, wherein the sprite graphics can be divided into several fragments, establishing the initial OPC model according to an optical system parameter and a lithography parameter; simulating the test graph according to the initial OPC model to obtain the space light intensity parameter of each fragment; grouping the fragments according to the distribution condition of the space light intensity parameter of each fragment; respectively establishing a corresponding sub-space model according to space light intensity parameter of the fragment corresponding to each group, by aiming at different space light intensity parameters of the sprite graphics in the test graph, respectively employing the different sub-space models for performing optical proximity correction to effectively increase the subsequent formed graphics quality on wafer.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for establishing an OPC model and a method for optical proximity calibration of user target graphics. Background technique [0002] In semiconductor manufacturing, as the design size continues to shrink, the diffraction effect of light becomes more and more obvious, and its result is the final optical image degradation of the design pattern, and finally the actual pattern formed by photolithography on the silicon wafer This phenomenon is called OPE (Optical Proximity Effect, Optical Proximity Effect). [0003] In order to correct the OPE phenomenon, OPC (Optical Proximity Correction, optical proximity effect correction) was produced. The core idea of ​​OPC is to establish the OPC model based on the consideration of offsetting the OPE phenomenon, and design the photomask pattern according to the OPC model, so that although the photolithography pattern after photol...

Claims

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Application Information

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IPC IPC(8): G03F1/36
CPCG03F1/36
Inventor 曹清晨
Owner SEMICON MFG INT (SHANGHAI) CORP
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