Backside metallization process
A technology of back metallization and process method, which is applied in the field of back metallization technology, can solve the problems of metal layer oxidation and peeling, which cannot be completely eliminated, and achieve the effect of avoiding oxidation or peeling
Active Publication Date: 2015-05-13
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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Problems solved by technology
However, at atmospheric pressure N 2 environment process, due to O 2 It cannot be completely eliminated. When the temperature is slightly higher, the metal layer will be oxidized and peeled off easily.
Method used
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[0023] The backside metallization process of the present invention will be described in more detail below in conjunction with the schematic diagram, wherein a preferred embodiment of the present invention is represented, it should be understood that those skilled in the art can modify the present invention described here, and still realize the advantages of the present invention Effect. Therefore, the following description should be understood as the broad knowledge of those skilled in the art, but not as a limitation of the present invention.
[0024] In the following paragraphs the invention is described more specifically by way of example with reference to the accompanying drawings. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodi...
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Abstract
The invention discloses a backside metallization process. The process comprises the following steps of: arranging a semiconductor substrate, placing the semiconductor substrate in an evaporation chamber and pumping vacuum from the evaporation chamber; opening a halogen lamp in the evaporation chamber, and heating the evaporation chamber to first predetermined temperature; retaining the first predetermined temperature, depositing a first metal layer on the back of the semiconductor substrate, and forming an alloy layer by the first metal layer and the part contacting the back of the semiconductor substrate; closing the halogen lamp in the evaporation chamber and cooling the evaporation chamber to second predetermined temperature. According to the backside metallization process, when the metal layer is grown, the alloy layer can be formed in an ultra-high vacuum condition, and the metal layer can be prevented from being oxidized or stripped.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a back metallization process method. Background technique [0002] IGBT (Insulated gate bipolar transistor, insulated gate bipolar transistor) has been widely used in the fields of inverters, switching power supplies, lighting circuits and traction drive circuits with DC voltages above 600V due to its advantages of low driving power and low saturation voltage. [0003] In the manufacturing process of IGBT devices, it is usually necessary to form a back alloy structure on the back of the substrate to be used as the lead-out electrode. Usually, after the metal layer is deposited on the back of the substrate, a rapid annealing process is required to form an alloy between the metal layer and the substrate, thereby reducing the ohmic contact resistance and barrier voltage between the metal layer and the substrate, otherwise the IGBT device The conduction voltage drop will incr...
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IPC IPC(8): H01L21/28H01L21/285C23C14/28C23C14/14
CPCC23C14/14C23C14/28H01L21/76895H01L2221/1068
Inventor 傅荣颢
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP